小角x射线散射法研究二氧化硅密度波动的温度依赖性

R. Le Parc, B. Champagnon, L. David, A. Faivre, C. Levelut, P. Guenot, J. Hazemann, C. Rochas, J. Simon
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引用次数: 10

摘要

摘要采用同步辐射的小角x射线散射方法,研究了室温和20 ~ 1500℃范围内有效温度为1000 ~ 1500℃的低oh含量二氧化硅样品。从密度波动的角度分析了x射线零角散射强度的极限。我们证明了密度波动与结构松弛密切相关;两者都取决于样品的热历史(即有效温度),温度范围低于Tg。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Temperature dependence of the density fluctuations of silica by small-angle X-ray scattering
Abstract Low-OH-content silica samples having fictive temperatures in the interval 1000–1500°C, have been studied by small-angle X-ray scattering using synchrotron radiations both at room temperature and from 20 to 1500deg;C. The limit for zero-angle X-ray scattering intensity is analysed in term of density fluctuations. We demonstrate that density fluctuations are strongly related to structural relaxation; both depend on thermal history (i.e. the fictive temperature) of the sample, in the temperature range below Tg.
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