硅纳米结构的设计与优化

B. Dieng, M. Beye, M. Toure, D. Diouf, D. Kobor, A. S. Maiga
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引用次数: 3

摘要

本文综述了近年来用于晶体硅太阳能电池抗反射和光捕获的各种硅纳米结构的研究进展。模拟和优化也执行了最相关的这些纳米结构。结果表明,纳米锥体和纳米拟形体的抗反射性能优于纳米柱,在300 ~ 1100 nm波长范围内,在正常入射下,晶体硅表面的平均反射率降至2%以下。对于入射角小于60°和平均s光和p光偏振,该反射率也保持在4%以下。因此,用这两种纳米结构装饰的硅太阳能电池的短路电流密度分别为41.62 mA/cm²和41.96 mA/cm²。最后,我们描述了用金属辅助化学蚀刻的方法通过纳米线形成硅纳米锥。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design and optimization of silicon nanostructures
In this work, recent advances in various silicon nanostructures used in crystalline silicon solar cells for antireflection and light trapping are reviewed. Simulations and optimizations are also performed for the most relevant of these nanostructures. The results showed that nanocones and nanoparaboloids outperform nanopillars and give almost the same antireflective performance, reducing the average reflectance of the crystalline silicon surface below 2% in the wavelength range 300-1100 nm and under normal incidence. This reflectance is also found to stay below 4% for angles of incidence lower than 60° and for the averaged s and p light polarization. As a result, short-circuit current densities of 41.62 and 41.96 mA/cm², can be expected for a silicon solar cell decorated with these two nanostructures, respectively. Finally, we described the formation of silicon nanocones via nanowires by metal assisted chemical etching.
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