二维晶格分布反射激光器的研究

LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242) Pub Date : 2001-12-01 DOI:10.1109/LEOS.2001.969281

L. J. Sargent, A. Massara, M. Gioannini, J. Yong, P. Heard, R. Penty, I. White

{"title":"二维晶格分布反射激光器的研究","authors":"L. J. Sargent, A. Massara, M. Gioannini, J. Yong, P. Heard, R. Penty, I. White","doi":"10.1109/LEOS.2001.969281","DOIUrl":null,"url":null,"abstract":"A detailed study of the InGaAsP-InP 2D-lattice MQW laser has been undertaken. Characterisation of the optical field intensity as a function of distance along the device cavity has shown that etching significantly alters the optical properties of the waveguide. A high value of coupling coefficient is obtained, with K/sub g/ >250cm/sup -1/. Modelling suggests that this high value is consistent with the mode-hop free single-mode emission found to hold in the etched device even under large-signal modulation at 10 Gb/s.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"10 1","pages":"275-276 vol.1"},"PeriodicalIF":0.0000,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of 2D-lattice distributed reflector lasers\",\"authors\":\"L. J. Sargent, A. Massara, M. Gioannini, J. Yong, P. Heard, R. Penty, I. White\",\"doi\":\"10.1109/LEOS.2001.969281\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A detailed study of the InGaAsP-InP 2D-lattice MQW laser has been undertaken. Characterisation of the optical field intensity as a function of distance along the device cavity has shown that etching significantly alters the optical properties of the waveguide. A high value of coupling coefficient is obtained, with K/sub g/ >250cm/sup -1/. Modelling suggests that this high value is consistent with the mode-hop free single-mode emission found to hold in the etched device even under large-signal modulation at 10 Gb/s.\",\"PeriodicalId\":18008,\"journal\":{\"name\":\"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)\",\"volume\":\"10 1\",\"pages\":\"275-276 vol.1\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LEOS.2001.969281\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOS.2001.969281","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

对InGaAsP-InP二维晶格MQW激光器进行了详细的研究。光场强度随器件腔体距离的变化特性表明，蚀刻显著地改变了波导的光学特性。耦合系数较高，K/sub g/ >250cm/sup -1/。建模表明，这个高值与蚀刻器件中即使在10gb /s的大信号调制下也能保持的无模跳单模发射一致。

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Investigation of 2D-lattice distributed reflector lasers

A detailed study of the InGaAsP-InP 2D-lattice MQW laser has been undertaken. Characterisation of the optical field intensity as a function of distance along the device cavity has shown that etching significantly alters the optical properties of the waveguide. A high value of coupling coefficient is obtained, with K/sub g/ >250cm/sup -1/. Modelling suggests that this high value is consistent with the mode-hop free single-mode emission found to hold in the etched device even under large-signal modulation at 10 Gb/s.

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LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)

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