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InP衬底上InAsP的电流控制液相外延

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147419
K. Inubushi, S. Sakai, T. Hyakudai, Y. Shintani
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引用次数: 0

摘要

研究了传统液相外延(LPE)生长中从衬底到熔体的电流对InAsP性能的影响
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Current-controlled liquid phase epitaxy of InAsP on InP substrates
The effects of the current flow from the substrate to the melt in conventional liquid-phase-epitaxial (LPE) growth of InAsP on
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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials
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