合金随机波动对µLED效率的影响及垂直接触效率的优化

2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI:10.1109/NUSOD52207.2021.9541503

Cheng-Han Ho, Yuh‐Renn Wu

{"title":"合金随机波动对µLED效率的影响及垂直接触效率的优化","authors":"Cheng-Han Ho, Yuh‐Renn Wu","doi":"10.1109/NUSOD52207.2021.9541503","DOIUrl":null,"url":null,"abstract":"µ-LED’s efficiency is enormously dependent on the chip size, which is believed to be the influence of sidewall traps. However, the decrease of IQE in AlInGaP based red LED is much stronger than nitride based LEDs. This paper examines the role of random alloy fluctuation with our 2D simulation software for the whole LED chip size to extract the major factors leading to the large IQE discrepancy between nitride-based and AlGaInP based LEDs. The design rule of the vertical LEDs to avoid the sidewall influences of µ-LED will be proposed in the presentation.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"18 2","pages":"65-66"},"PeriodicalIF":0.0000,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influences of Random Alloy Fluctuation to the Efficiency of µLED and Optimization of Efficiency with Vertical Type Contact\",\"authors\":\"Cheng-Han Ho, Yuh‐Renn Wu\",\"doi\":\"10.1109/NUSOD52207.2021.9541503\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"µ-LED’s efficiency is enormously dependent on the chip size, which is believed to be the influence of sidewall traps. However, the decrease of IQE in AlInGaP based red LED is much stronger than nitride based LEDs. This paper examines the role of random alloy fluctuation with our 2D simulation software for the whole LED chip size to extract the major factors leading to the large IQE discrepancy between nitride-based and AlGaInP based LEDs. The design rule of the vertical LEDs to avoid the sidewall influences of µ-LED will be proposed in the presentation.\",\"PeriodicalId\":6780,\"journal\":{\"name\":\"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"volume\":\"18 2\",\"pages\":\"65-66\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-09-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD52207.2021.9541503\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD52207.2021.9541503","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

µled的效率很大程度上取决于芯片的尺寸，这被认为是侧壁陷阱的影响。然而，基于AlInGaP的红色LED的IQE下降比基于氮化物的LED强得多。本文利用我们的二维模拟软件对整个LED芯片尺寸进行了随机合金波动的作用，以提取导致氮基和AlGaInP基LED之间IQE差异较大的主要因素。为了避免µled的侧壁影响，垂直led的设计规则将在演示中提出。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Influences of Random Alloy Fluctuation to the Efficiency of µLED and Optimization of Efficiency with Vertical Type Contact

µ-LED’s efficiency is enormously dependent on the chip size, which is believed to be the influence of sidewall traps. However, the decrease of IQE in AlInGaP based red LED is much stronger than nitride based LEDs. This paper examines the role of random alloy fluctuation with our 2D simulation software for the whole LED chip size to extract the major factors leading to the large IQE discrepancy between nitride-based and AlGaInP based LEDs. The design rule of the vertical LEDs to avoid the sidewall influences of µ-LED will be proposed in the presentation.

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2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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