从含ga材料的x射线吸收近边光谱中提取化学信息的第一性原理方法

Kyle Groden, Fernando D Vila, Li Li, Simon Bare, Susannah Scott, Jean-Sabin McEwen
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引用次数: 0

摘要

x射线吸收近边结构(XANES)可以提供具有未知结构的重要含ga材料(包括催化活性材料)配位环境的独特详细信息。在本研究中,我们使用基于第一性原理的方法模拟了7种Ga分子配合物以及b-Ga2O3的Ga K-edge XANES,以探索实验观察到的特征的化学起源。利用FEFF、CASTEP和StoBE计算理论光谱,以评估计算结果对计算方法的敏感性。虽然XANES的特征依赖于Ga配位环境,但它们对配体的电负性和Ga的对称性也很敏感。白线位置响应核心态(由于差异筛选)和价态“p”态(由于配体配位的差异)的变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
First Principles Approach to Extracting Chemical Information from X-Ray Absorption Near-Edge Spectra of Ga-Containing Materials
The X-ray absorption near edge structure (XANES) can provide uniquely detailed information on the coordination environments of important Ga-containing materials with unknown structures, including catalytically-active materials. In this study, the Ga K-edge XANES was simulated using first principles-based methods for seven molecular Ga complexes, as well b-Ga2O3, in order to explore the chemical origins of the experimentally observed features. The theoretical spectra were computed using FEFF, CASTEP and StoBE, in order to assess the sensitivity of the results to the computational approach. While the XANES features depend on the Ga coordination environment, they are also sensitive to the electronegativity of the ligands and the symmetry at Ga. The white line position responds to changes in both the core state (due to differential screening) and the valence “p” states (arising from differences in ligand coordination).
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