3 × 3可逆量子门的设计与分析

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Hilal A. Bhat, Farooq A. Khanday, Brajesh K. Kaushik, Khurshed A. Shah
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引用次数: 2

摘要

量子计算是一项现代技术,它利用量子力学定律来解决传统计算范式范围之外的不可逆性和功耗等问题。为了在许多应用领域中利用量子物理,利用可逆门进行电路设计是一项至关重要的任务。本文提出了三输入三输出(3 × 3)可逆门的量子实现方法。本文首次给出了大多数门的功能矩阵。此外,本文还首次介绍了在各种实际应用中具有重要意义的URG、FRSG1、R和JTF1门的量子实现。最后对实现高效量子电路的可逆门的性能参数进行了比较。结果表明,在有效视角下,每个门都具有额外的优势。因此,本文为实现高阶量子电路设计提供了一个有用的3 × 3可逆门库。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design and analysis of 3 × 3 reversible quantum gates

Quantum computing is a modern technology that uses the laws of quantum mechanics to tackle issues like irreversibility and power dissipation, which are beyond the scope of traditional computing paradigms. To exploit quantum physics in many application fields, circuit design using reversible gates is a crucial task. In this paper, quantum implementation of three-input/three-output (3 × 3) reversible gates is presented. The functional matrices of most of the gates are presented for the first time in this paper. In addition, the quantum implementation of URG, FRSG1, R and JTF1 gates, which find importance in various practical applications, is presented for the first time in this paper. The paper concludes with a comparison of the performance parameters of reversible gates for efficient quantum circuit realization. It is shown that each gate has additional advantages in valid perspectives. The paper thus provides a useful library of 3 × 3 reversible gates for the implementation of higher-order quantum circuit design.

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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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