宽InAs量子阱中强磁场中电子的回旋质量

Q4 Physics and Astronomy

Eurasian Journal of Physics and Functional Materials Pub Date : 2022-03-23 DOI:10.32523/ejpfm.2022060103

B. Abdulazizov

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引用次数: 2

摘要

本文给出了基于双波段模型的强磁场下InAs量子阱中朗道能级和回旋加速器质量的计算结果。计算是在量子阱深度接近无穷大的情况下进行的，考虑到第二子带的朗道能级。结果表明，考虑电子在第二子带内的回旋跃迁，可以很好地描述在强磁场下在InAs/In0.81Ga0.19 As/Inx Al1−x As异质结构中得到的实验数据。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Cyclotron mass of an electron in strong magnetic fields in a wide InAs quantum well

The results of calculations of the Landau level and cyclotron mass in strong magnetic fields in an InAs quantum well based on the two-band model are presented. The calculations were performed in the approximation of infinity of the depth of the quantum well, taking into account the Landau level of the second subband. It is shown that taking into account the cyclotron transition of electrons within the second subband satisfactorily describes the experimental data obtained in strong magnetic fields in the InAs/In0.81Ga0.19 As/Inx Al1−x As heterostructure.

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来源期刊

Eurasian Journal of Physics and Functional Materials Materials Science-Materials Science (miscellaneous)

CiteScore

1.10

自引率

0.00%

发文量

审稿时长

5 weeks