一种用于控制侧瓣方向图的交叉偶极元阵列

IF 0.7 Q4 COMPUTER SCIENCE, INFORMATION SYSTEMS
J. Mohammed, A. Khmees
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引用次数: 1

摘要

本文介绍了一种具有新单元结构的阵列,用于实现通信系统、跟踪雷达和成像等许多应用中所需要的非对称副瓣方向图零化。所提出的元件结构包括在水平和垂直位置组合两个简单的线偶极子以形成交叉偶极子元件。水平偶极子和垂直偶极子的阵列图具有一些共同的辐射特征,例如利用角零位置来提供副瓣零。通过对水平偶极子的阵列图进行适当的缩放,并在垂直偶极子的阵列图上加减,可以得到一个新的阵列图,该阵列图对应于具有控制副瓣图的交叉偶极子单元。比例因子选择要取消哪些副瓣。该方法同样适用于均匀和非均匀激励阵列。利用CST微波工作室对具有10个半波长交叉偶极子的阵列进行了仿真验证。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An Array with Crossed-Dipoles Elements for Controlling Side Lobes Pattern
This paper introduces an array with a new element structure to achieve asymmetric sidelobe pattern nulling which is a much desired feature in many applications such as communication systems, tracking radars, and imaging. The proposed element structure consists of combining two simple wire dipoles in the horizontal and vertical positions to form a crossed dipole element. The array patterns of the horizontal and vertical dipoles alone share some common radiation feature such angular null positions which are exploited to provide sidelobe nulling. By properly scaling the array pattern of the horizontal dipoles and added or subtracted its array pattern from that of the vertical dipoles, a new array pattern corresponds to the crossed dipoles elements with controlled sidelobes pattern can be obtained. The scaling factor selects which sidelobes to be cancelled. The method is equally applied to the uniformly and nun-uniformly excited arrays. The proposed idea is verified by simulating an array with 10 half wavelength crossed dipoles using CST microwave studio.
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CiteScore
0.20
自引率
14.30%
发文量
0
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