用于第五代通信的高阻自激振荡上变频混频器

Q2 Computer Science

International Journal of Electrical and Computer Engineering Pub Date : 2023-10-01 DOI:10.11591/ijece.v13i5.pp4979-4986

A. Es-saqy, Maryam Abata, M. Fattah, S. Mazer, M. Mehdi, M. El Bekkali, C. Algani

{"title":"用于第五代通信的高阻自激振荡上变频混频器","authors":"A. Es-saqy, Maryam Abata, M. Fattah, S. Mazer, M. Mehdi, M. El Bekkali, C. Algani","doi":"10.11591/ijece.v13i5.pp4979-4986","DOIUrl":null,"url":null,"abstract":"This paper presents the design of a pseudomorphic high electron mobility transistor (pHEMT) self-oscillating mixer (SOM) for millimeter wave wireless communication systems. The 180° out-of-phase technique is chosen to both improve the desired lower sideband (LSB) signal and to achieve a satisfactory rejection of the unwanted signals (LO, USB and IF). This SOM is designed on the PH15 process of UMS foundry which is based on 0.15 µm GaAs pHEMT. The signal is up-converted from 2 GHz-IF frequency to 26 GHz-LSB frequency, using an autogenerated 28 GHz-LO signal. Simulations were performed using the advanced design system (ADS) workflow. They show 6.4 dB conversion gain and a signal rejection rate of 29.7 dB for the unwanted USB signal. the chip size is 3.6 mm2.","PeriodicalId":38060,"journal":{"name":"International Journal of Electrical and Computer Engineering","volume":" ","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High rejection self-oscillating up-conversion mixer for fifth-generation communications\",\"authors\":\"A. Es-saqy, Maryam Abata, M. Fattah, S. Mazer, M. Mehdi, M. El Bekkali, C. Algani\",\"doi\":\"10.11591/ijece.v13i5.pp4979-4986\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design of a pseudomorphic high electron mobility transistor (pHEMT) self-oscillating mixer (SOM) for millimeter wave wireless communication systems. The 180° out-of-phase technique is chosen to both improve the desired lower sideband (LSB) signal and to achieve a satisfactory rejection of the unwanted signals (LO, USB and IF). This SOM is designed on the PH15 process of UMS foundry which is based on 0.15 µm GaAs pHEMT. The signal is up-converted from 2 GHz-IF frequency to 26 GHz-LSB frequency, using an autogenerated 28 GHz-LO signal. Simulations were performed using the advanced design system (ADS) workflow. They show 6.4 dB conversion gain and a signal rejection rate of 29.7 dB for the unwanted USB signal. the chip size is 3.6 mm2.\",\"PeriodicalId\":38060,\"journal\":{\"name\":\"International Journal of Electrical and Computer Engineering\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Electrical and Computer Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.11591/ijece.v13i5.pp4979-4986\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"Computer Science\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Electrical and Computer Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.11591/ijece.v13i5.pp4979-4986","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"Computer Science","Score":null,"Total":0}

引用次数: 1

摘要

本文介绍了一种用于毫米波无线通信系统的伪高电子迁移率晶体管（pHEMT）自激混频器（SOM）的设计。选择180°异相技术是为了改善所需的下边带（LSB）信号，并实现对不需要的信号（LO、USB和IF）的满意抑制。该SOM是根据UMS铸造厂的PH15工艺设计的，该工艺基于0.15µm GaAs pHEMT。该信号使用自动生成的28 GHz LO信号从2 GHz IF频率上变频到26 GHz LSB频率。使用高级设计系统（ADS）工作流程进行仿真。它们显示出6.4dB的转换增益和29.7dB的不需要的USB信号的信号抑制率。芯片尺寸为3.6mm2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High rejection self-oscillating up-conversion mixer for fifth-generation communications

This paper presents the design of a pseudomorphic high electron mobility transistor (pHEMT) self-oscillating mixer (SOM) for millimeter wave wireless communication systems. The 180° out-of-phase technique is chosen to both improve the desired lower sideband (LSB) signal and to achieve a satisfactory rejection of the unwanted signals (LO, USB and IF). This SOM is designed on the PH15 process of UMS foundry which is based on 0.15 µm GaAs pHEMT. The signal is up-converted from 2 GHz-IF frequency to 26 GHz-LSB frequency, using an autogenerated 28 GHz-LO signal. Simulations were performed using the advanced design system (ADS) workflow. They show 6.4 dB conversion gain and a signal rejection rate of 29.7 dB for the unwanted USB signal. the chip size is 3.6 mm2.

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来源期刊

International Journal of Electrical and Computer Engineering Computer Science-Computer Science (all)

CiteScore

4.10

自引率

0.00%

发文量

177

期刊介绍： International Journal of Electrical and Computer Engineering (IJECE) is the official publication of the Institute of Advanced Engineering and Science (IAES). The journal is open to submission from scholars and experts in the wide areas of electrical, electronics, instrumentation, control, telecommunication and computer engineering from the global world. The journal publishes original papers in the field of electrical, computer and informatics engineering which covers, but not limited to, the following scope: -Electronics: Electronic Materials, Microelectronic System, Design and Implementation of Application Specific Integrated Circuits (ASIC), VLSI Design, System-on-a-Chip (SoC) and Electronic Instrumentation Using CAD Tools, digital signal & data Processing, , Biomedical Transducers and instrumentation, Medical Imaging Equipment and Techniques, Biomedical Imaging and Image Processing, Biomechanics and Rehabilitation Engineering, Biomaterials and Drug Delivery Systems; -Electrical: Electrical Engineering Materials, Electric Power Generation, Transmission and Distribution, Power Electronics, Power Quality, Power Economic, FACTS, Renewable Energy, Electric Traction, Electromagnetic Compatibility, High Voltage Insulation Technologies, High Voltage Apparatuses, Lightning Detection and Protection, Power System Analysis, SCADA, Electrical Measurements; -Telecommunication: Modulation and Signal Processing for Telecommunication, Information Theory and Coding, Antenna and Wave Propagation, Wireless and Mobile Communications, Radio Communication, Communication Electronics and Microwave, Radar Imaging, Distributed Platform, Communication Network and Systems, Telematics Services and Security Network; -Control[...] -Computer and Informatics[...]