基于脉冲激光沉积多孔硅上氧化锌纳米结构的高效光电探测器

IF 3.3 4区 物理与天体物理 Q2 CHEMISTRY, PHYSICAL
Ali J. Hadi, Uday M. Nayef, Falah A.-H. Mutlak, Majid S. Jabir
{"title":"基于脉冲激光沉积多孔硅上氧化锌纳米结构的高效光电探测器","authors":"Ali J. Hadi,&nbsp;Uday M. Nayef,&nbsp;Falah A.-H. Mutlak,&nbsp;Majid S. Jabir","doi":"10.1007/s11468-023-02016-3","DOIUrl":null,"url":null,"abstract":"<div><p>In this study deposited zinc oxide (ZnO) nanostructures were prepared by pulsed laser deposition (PLD) technique on porous silicon (PS) substrates that were prepared via photoelectrochemical etching of silicon n-type (100). The study investigated the influence of laser energy on various characteristics of the fabricated devices, including their optical, morphological, structural, electrical, and photodetector features. The X-ray diffraction results indicate a dominant broad diffraction peak at 69.14°, and the ZnO phase aligns with the hexagonal wurtzite structure. The field emission scanning electron microscopy micrograph illustrates that porous silicon has a sponge-like fashion, while ZnO nanostructures have spherical grains distributed randomly and grow larger with laser energy. The optical characteristics of the manufactured samples were examined using techniques that include UV–vis absorption spectroscopy, UV–vis diffuse reflectance spectrometry, and photoluminescence spectroscopy. The findings indicated that decreased laser energy led to a blue shift in the energy gap. The reflectivity of the produced samples decreased after the deposition of a zinc oxide layer over porous silicon. The photoluminescence examination showed the presence of four distinct emission peaks, namely, UV, violet-blue, blue, and green, consequent to coating a ZnO layer onto the porous silicon substrate. Fourier transform infrared spectroscopy confirmed that ZnO thin films deposited on porous silicon cause surface oxidation and produced a new peak at 455.2 cm<sup>−1</sup> related to the Zn–O stretching band. The current density–voltage properties of the fabricated devices in the absence and presence of white light were investigated as a function of laser energy. The ZnO NPs/PS/n-Si photoreactors displayed rectifier features and had outstanding spectral responsivity from ultraviolet to near-infrared. Moreover, the fabricated photoreactor showed the most prominent external quantum efficiency (EQE) in the UV region. The results of this study are of great importance to the advancement of photodetectors and optoelectronic devices based on ZnO and porous silicon.</p></div>","PeriodicalId":736,"journal":{"name":"Plasmonics","volume":"19 2","pages":"577 - 593"},"PeriodicalIF":3.3000,"publicationDate":"2023-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-Efficiency Photodetectors Based on Zinc Oxide Nanostructures on Porous Silicon Grown by Pulsed Laser Deposition\",\"authors\":\"Ali J. Hadi,&nbsp;Uday M. Nayef,&nbsp;Falah A.-H. Mutlak,&nbsp;Majid S. Jabir\",\"doi\":\"10.1007/s11468-023-02016-3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this study deposited zinc oxide (ZnO) nanostructures were prepared by pulsed laser deposition (PLD) technique on porous silicon (PS) substrates that were prepared via photoelectrochemical etching of silicon n-type (100). The study investigated the influence of laser energy on various characteristics of the fabricated devices, including their optical, morphological, structural, electrical, and photodetector features. The X-ray diffraction results indicate a dominant broad diffraction peak at 69.14°, and the ZnO phase aligns with the hexagonal wurtzite structure. The field emission scanning electron microscopy micrograph illustrates that porous silicon has a sponge-like fashion, while ZnO nanostructures have spherical grains distributed randomly and grow larger with laser energy. The optical characteristics of the manufactured samples were examined using techniques that include UV–vis absorption spectroscopy, UV–vis diffuse reflectance spectrometry, and photoluminescence spectroscopy. The findings indicated that decreased laser energy led to a blue shift in the energy gap. The reflectivity of the produced samples decreased after the deposition of a zinc oxide layer over porous silicon. The photoluminescence examination showed the presence of four distinct emission peaks, namely, UV, violet-blue, blue, and green, consequent to coating a ZnO layer onto the porous silicon substrate. Fourier transform infrared spectroscopy confirmed that ZnO thin films deposited on porous silicon cause surface oxidation and produced a new peak at 455.2 cm<sup>−1</sup> related to the Zn–O stretching band. The current density–voltage properties of the fabricated devices in the absence and presence of white light were investigated as a function of laser energy. The ZnO NPs/PS/n-Si photoreactors displayed rectifier features and had outstanding spectral responsivity from ultraviolet to near-infrared. Moreover, the fabricated photoreactor showed the most prominent external quantum efficiency (EQE) in the UV region. The results of this study are of great importance to the advancement of photodetectors and optoelectronic devices based on ZnO and porous silicon.</p></div>\",\"PeriodicalId\":736,\"journal\":{\"name\":\"Plasmonics\",\"volume\":\"19 2\",\"pages\":\"577 - 593\"},\"PeriodicalIF\":3.3000,\"publicationDate\":\"2023-08-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Plasmonics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s11468-023-02016-3\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Plasmonics","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s11468-023-02016-3","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0

摘要

本研究采用脉冲激光沉积(PLD)技术在多孔硅(PS)基底上制备了沉积氧化锌(ZnO)纳米结构,该基底是通过光电化学法蚀刻 n 型硅(100)制备的。研究调查了激光能量对所制备器件各种特性的影响,包括其光学、形态、结构、电学和光电探测器特性。X 射线衍射结果表明,在 69.14°处有一个占优势的宽衍射峰,氧化锌的相位与六方菱形结构一致。场发射扫描电子显微镜显微照片显示,多孔硅具有海绵状外观,而氧化锌纳米结构具有随机分布的球形晶粒,并随着激光能量的增加而增大。利用紫外-可见吸收光谱、紫外-可见漫反射光谱和光致发光光谱等技术对制备样品的光学特性进行了检测。研究结果表明,激光能量的降低导致了能隙的蓝移。在多孔硅上沉积氧化锌层后,所制样品的反射率下降。光致发光检测显示,在多孔硅衬底上涂覆氧化锌层后,出现了四个不同的发射峰,即紫外光、紫蓝色、蓝色和绿色。傅立叶变换红外光谱证实,沉积在多孔硅上的氧化锌薄膜会导致表面氧化,并在 455.2 cm-1 处产生一个与 Zn-O 伸展带有关的新峰。研究了所制备器件在无白光和有白光时的电流密度-电压特性与激光能量的函数关系。ZnO NPs/PS/n-Si 光反应器显示出整流器特性,并具有从紫外到近红外的出色光谱响应性。此外,所制造的光反应器在紫外区显示出最突出的外部量子效率(EQE)。这项研究的结果对于促进基于氧化锌和多孔硅的光电探测器和光电设备的发展具有重要意义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-Efficiency Photodetectors Based on Zinc Oxide Nanostructures on Porous Silicon Grown by Pulsed Laser Deposition

In this study deposited zinc oxide (ZnO) nanostructures were prepared by pulsed laser deposition (PLD) technique on porous silicon (PS) substrates that were prepared via photoelectrochemical etching of silicon n-type (100). The study investigated the influence of laser energy on various characteristics of the fabricated devices, including their optical, morphological, structural, electrical, and photodetector features. The X-ray diffraction results indicate a dominant broad diffraction peak at 69.14°, and the ZnO phase aligns with the hexagonal wurtzite structure. The field emission scanning electron microscopy micrograph illustrates that porous silicon has a sponge-like fashion, while ZnO nanostructures have spherical grains distributed randomly and grow larger with laser energy. The optical characteristics of the manufactured samples were examined using techniques that include UV–vis absorption spectroscopy, UV–vis diffuse reflectance spectrometry, and photoluminescence spectroscopy. The findings indicated that decreased laser energy led to a blue shift in the energy gap. The reflectivity of the produced samples decreased after the deposition of a zinc oxide layer over porous silicon. The photoluminescence examination showed the presence of four distinct emission peaks, namely, UV, violet-blue, blue, and green, consequent to coating a ZnO layer onto the porous silicon substrate. Fourier transform infrared spectroscopy confirmed that ZnO thin films deposited on porous silicon cause surface oxidation and produced a new peak at 455.2 cm−1 related to the Zn–O stretching band. The current density–voltage properties of the fabricated devices in the absence and presence of white light were investigated as a function of laser energy. The ZnO NPs/PS/n-Si photoreactors displayed rectifier features and had outstanding spectral responsivity from ultraviolet to near-infrared. Moreover, the fabricated photoreactor showed the most prominent external quantum efficiency (EQE) in the UV region. The results of this study are of great importance to the advancement of photodetectors and optoelectronic devices based on ZnO and porous silicon.

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来源期刊
Plasmonics
Plasmonics 工程技术-材料科学:综合
CiteScore
5.90
自引率
6.70%
发文量
164
审稿时长
2.1 months
期刊介绍: Plasmonics is an international forum for the publication of peer-reviewed leading-edge original articles that both advance and report our knowledge base and practice of the interactions of free-metal electrons, Plasmons. Topics covered include notable advances in the theory, Physics, and applications of surface plasmons in metals, to the rapidly emerging areas of nanotechnology, biophotonics, sensing, biochemistry and medicine. Topics, including the theory, synthesis and optical properties of noble metal nanostructures, patterned surfaces or materials, continuous or grated surfaces, devices, or wires for their multifarious applications are particularly welcome. Typical applications might include but are not limited to, surface enhanced spectroscopic properties, such as Raman scattering or fluorescence, as well developments in techniques such as surface plasmon resonance and near-field scanning optical microscopy.
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