InGaSb-Bi层中In和Ga原子组成比对在Si（111）衬底上生长InGaSb薄膜的影响

{"title":"InGaSb-Bi层中In和Ga原子组成比对在Si（111）衬底上生长InGaSb薄膜的影响","authors":"M. Mori, Jotaro Inoue, K. Maezawa","doi":"10.1380/ejssnt.2023-012","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":11626,"journal":{"name":"E-journal of Surface Science and Nanotechnology","volume":" ","pages":""},"PeriodicalIF":0.5000,"publicationDate":"2022-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of Composition Ratio of In and Ga Atoms of InGaSb Bi-layer on Growth of InGaSb Thin Films on Si(111) Substrate\",\"authors\":\"M. Mori, Jotaro Inoue, K. Maezawa\",\"doi\":\"10.1380/ejssnt.2023-012\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":11626,\"journal\":{\"name\":\"E-journal of Surface Science and Nanotechnology\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":0.5000,\"publicationDate\":\"2022-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"E-journal of Surface Science and Nanotechnology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1380/ejssnt.2023-012\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"NANOSCIENCE & NANOTECHNOLOGY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"E-journal of Surface Science and Nanotechnology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1380/ejssnt.2023-012","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"NANOSCIENCE & NANOTECHNOLOGY","Score":null,"Total":0}