A. Mahmoud, E. Ibrahim, L. Galal, E. R. Shaaban, E. Yousef
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引用次数: 0
摘要
x = 0、5、10、15和20 at的Zn1-xFexO薄膜。%是在高真空条件下用电子束枪蒸发法制得的。考虑了Fe掺杂浓度对薄膜结构、光学和磁性的影响。在不同铁浓度下,所有薄膜的XRD谱图均表现为纤锌矿型结构。结果表明:随着Fe含量的增加,纳米膜的尺寸从24 nm(0%)减小到11 nm(0.20%),这是由于Zn和Fe离子半径的差异所致;在沉淀过程中制备的未掺杂和掺铁10%的ZnO纳米粒子的XPS光谱中可以看到与所要看到的元素相关的峰:锌(Zn),铁(Fe)和氧(O)。通过椭偏模型的SE测量获得了Zn1-xFexO薄膜的光学常数(n, k),从而验证了铁掺杂ZnO中的Fe3+离子。随着Fe的加入,能带隙从3.44 eV减小到3.28 eV。M-H测量揭示了fe掺杂ZnO薄膜的室温铁磁性。随着铁浓度的增加,磁化强度增加,直到铁浓度达到15%,这时磁化强度开始下降。这种磁化强度的降低是由于尖晶石相的存在,这在XRD光谱中可以看出。这些发现表明,铁掺杂ZnO是一种非常理想的自旋电子和光电子器件材料。
Structural, optical and magnetic characteristics of iron doped zinc oxide thin films
Zn1-xFexO films with x = 0, 5, 10, 15 and 20 at.% were prepared under high vacuum by the electron beam gun evaporation. The impact of Fe doping concentration on the films' structural, optical and magnetic characteristics has been taken into account. The patterns of XRD for all films at various Fe concentrations showed wurtzite-type structures. The results show that the size of nano-films reduces from 24 nm (0%) to 11 nm (0.20%) with elevating Fe content, which is owing to the difference between the ionic radii of Zn and Fe. Peaks associated with the elements to be seen were visible in the XPS spectra of undoped and 10% Fe-doped ZnO nanoparticles produced by the precipitation process: zinc (Zn), iron (Fe), and oxygen (O). The optical constants (n, k) of the Zn1-xFexO films were obtained by the SE measurements by an ellipsometric model, allowing for the verification of the Fe3+ ions in Fe-doped ZnO. With the addition of Fe, the energy band gap decreased from 3.44 eV to 3.28 eV. M-H measurements revealed room-temperature ferromagnetism in Fe-doped ZnO thin film. As the Fe concentration rises, the magnetization increases until it reaches a concentration of 15%, at which point it starts to decrease. This decrease in magnetization was attributable to the spinel phase, which was seen in the XRD spectra. These findings imply that Fe-doped ZnO is a highly suggested material for the creation of spintronic and optoelectronic devices.
期刊介绍:
Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.