热处理温度对BaSrTiO3化合物结构和电性能的影响

IF 1 4区材料科学

Journal of Ovonic Research Pub Date : 2023-07-01 DOI:10.15251/jor.2023.194.379

H. A. Gatea, S. Shoja, H. J. Albazoni

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引用次数: 0

摘要

采用溶胶-凝胶法制备了铁电材料Ba0.7Sr0.3TiO3。使用乙酸钡和乙酸锶分别作为Ba和Sr的来源，使用异丙氧基Ti（IV）作为Ti的来源。使用乙酸作为乙酸钡和锶的溶剂，而使用2-甲氧基乙醇作为异丙氧基Ti（Ⅳ）的稳定剂。研究了高温对电气和结构的影响。FESEM揭示了不同温度下所有样品的粒度。XRD显示，Ba0.7Sr0.3TiO3样品在所有温度（1000、1100、1200˚C）下都具有四方相。高温影响四方性和晶格常数（a，c）；晶格常数在较高的温度下降低。在1000摄氏度下烧结的铁电体样品具有的介电特性不如在1100摄氏度和1200摄氏度下烧成的Ba0.7Sr0.3TiO3样品。当将介电常数绘制为温度的函数时，居里温度似乎在（28-32）摄氏度之间。

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Influence of heat-treatment temperature on structural and electrical properties for BaSrTiO3 compounds

The sol-gel process was utilized in the production of the ferroelectric material Ba0.7Sr0.3TiO3. Barium and strontium acetate were employed as sources for Ba and Sr, respectively, and Ti(IV) isopropoxide was used as a source for Ti. The acetic acid was utilized as a solvent for Ba and Sr acetate, whereas 2-methoxy ethanol was used as a stabilizer for Ti (IV) isopropoxide. The effect of high temperatures on electrical and structural were studied. The FESEM revealed the particle size of all samples with different temperatures. The XRD shows the Ba0.7Sr0.3TiO3 samples have a tetragonal phase for all temperatures (1000, 1100, 1200˚C). The high temperatures impacted tetragonality and the lattice constant (a, c); the lattice constant decreased at higher temperatures. The ferroelectric sample sintered at 1000 degrees Celsius had dielectric characteristics that were inferior to those of the Ba0.7Sr0.3TiO3sample sintered at 1100 and 1200ºC degrees Celsius. When the dielectric constant was graphed as a function of temperature, the Curie temperature appeared to be between (28-32) degrees Celsius.

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来源期刊

Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials

CiteScore

1.60

自引率

20.00%

发文量

期刊介绍： Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.