立方体织构Ni-7at的制备。用于涂覆导体的%W基模板

Xu Zhao, Yuxin Zheng, Fangyuan Zhang, M. Gao
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引用次数: 0

摘要

虽然目前已成功开发出高W含量(bbb50at .%)的Ni-W衬底,但其立方体织构和晶界的质量以及在涂覆导体中的广泛应用还有待进一步提高。本文采用500℃2 h的中间退火处理(IAT)优化了Ni-7at的形变和再结晶织构。%W (Ni7W)衬底。结果表明,采用化学溶液沉积法在Ni7W衬底上成功沉积了具有高立方织体含量、高质量表面的具有竞争力的高立方织体含量(2Zr2O7 (GZO))缓冲层,证明了先进的GZO/Ni7W模板在涂层导体上的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Preparation of a Cube-Textured Ni-7at.%W Based Template Used for Coated Conductors
Although Ni-W substrate with high W content (>5at.%) substrates have been developed successfully, the quality of cube texture and grain boundary, as well as extensive applications in coated conductors should be further improved. In the present work, once intermediate annealing treatment (IAT) at 500°C for 2 h has been employed to optimize the deformation and recrystallization textures in Ni-7at.%W (Ni7W) substrates. As a result, competitive high cube texture content (2Zr2O7 (GZO) buffer layer with strong cube texture and high-quality surface deposited successfully on the Ni7W substrate using the chemical solution deposition method, demonstrating the advanced GZO/Ni7W template is promising for coated conductors.
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