Cu+杂质对辐照Na2SO4−Cu晶体中电子-空穴俘获中心形成效率的影响

Q4 Physics and Astronomy

Eurasian Journal of Physics and Functional Materials Pub Date : 2021-09-22 DOI:10.32523/ejpfm.2021050305

T. Nurakhmetov, B. Yussupbekova, A. Zhunusbekov, D. Daurenbekov, B. Sadykova, K. Zhangylyssov, T. Alibay, D. Tolekov

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引用次数: 3

摘要

用光谱方法研究了Na2SO4−Cu晶体中杂质和本征电子空穴捕获中心的形成机制。结果表明，Na2SO4−Cu晶格中的杂质和本征电子-空穴捕获中心在相同的能量距离（约3.87-4.0 eV和4.43-4.5 eV）内产生。在电子-空穴俘获中心的退火过程中，复合过程的能量转移到杂质上。

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Influence of Cu+ impurity on the efficiency of creation of electron-hole trapping centers in irradiated Na2SO4 − Cu crystals

The mechanisms of creation of impurity and intrinsic electron-hole trapping centers in Na2SO4 − Cu crystals have been investigated by spectroscopic methods. It is shown that impurity and intrinsic electron-hole trapping centers in the crystal lattice Na2SO4 − Cu are created in the same energy distances approximately 3.87-4.0 eV and 4.43-4.5 eV. During the annealing of electron-hole trapping centers, the energy of the recombination processes is transferred to impurities.

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来源期刊

Eurasian Journal of Physics and Functional Materials Materials Science-Materials Science (miscellaneous)

CiteScore

1.10

自引率

0.00%

发文量

审稿时长

5 weeks