原始和PVA包覆的氧化锌纳米复合材料的机械、结构和光学性能

IF 1 4区 材料科学
P. Gopinath, P. Suresh, V. Jeevanantham
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引用次数: 1

摘要

采用沉淀法合成了不同浓度的氧化锌(ZnO)和聚乙烯醇包覆氧化锌(PVA-ZnO)。由于ZnO纳米粒子具有力学、结构和光学等多种性能,因此研究了ZnO纳米粒子对PVA的影响。采用XRD、FTIR、UV-Vis、SEM、EDAX等技术对合成的纳米颗粒进行了分析。在FTIR光谱中,在559 cm−1处观察到的峰表示样品中的M-O拉伸,这表明ZnO与PVA基体的相互作用。XRD谱图证实了ZnO纳米粒子的存在,ZnO纳米粒子和PVA- ZnO纳米粒子的尺寸分别为76 nm和61 nm。SEM分析观察到ZnO纳米粒子的均匀分散以及纳米粒子与PVA基体的相互作用,EDS分析确定了纳米粒子的纯度。紫外-可见光谱显示ZnO NPs和ZnO- pva纳米复合材料的光吸收行为,在紫外区表现出较高的吸收。对合成样品的抗拉强度和伸长率等力学性能进行了分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Mechanical, structural and optical properties of pristine and PVA capped zinc oxide nanocomposites
Zinc oxide (ZnO) and Poly vinyl alcohol capped zinc oxide (PVA-ZnO) of different concentrations were synthesized by precipitation method. PVA capped ZnO nanoparticles were examined to study the influence of ZnO nanoparticles on PVA as it possesses various properties such as mechanical, structural and optical. The synthesized nanoparticles were analyzed using XRD, FTIR, UV-Vis, SEM EDAX techniques. In the FTIR spectrum, the peak observed at 559 cm−1 indicates M–O stretching in the samples which specifies the interaction of ZnO with PVA matrix. The XRD patterns confirmed the presence of ZnO nanoparticles and the size of the ZnO nanoparticles and PVA- ZnO NPs were 76 nm and 61 nm. The uniform dispersion of ZnO nanoparticles as well as the interaction of nanoparticles with the PVA matrix were also observed in SEM analysis and the purity of NPs was determined from EDS analysis. The UV-vis spectra show the light absorption behavior of the ZnO NPs and ZnO-PVA nanocomposites and they exhibited high absorption in the UV region. The mechanical properties such as tensile strength and elongation were also analyzed for the synthesized samples.
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来源期刊
Journal of Ovonic Research
Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
1.60
自引率
20.00%
发文量
77
期刊介绍: Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.
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