纳米尺度选择性区域外延:从半导体激光器到单光子源

IF 7.4 1区物理与天体物理 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Progress in Quantum Electronics Pub Date : 2021-01-01 DOI:10.1016/j.pquantelec.2020.100305

V.B. Verma , V.C. Elarde

引用次数: 3

摘要

本文综述了选择性区域外延及其在半导体激光器发展中的历史，重点介绍了其在纳米尺度上在量子点和纳米孔激光器发展中的应用。最近的应用将讨论包括集成光子学和量子光子学的应用，如图案单光子源。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Nanoscale selective area epitaxy: From semiconductor lasers to single-photon sources

We present a review of selective area epitaxy and its history in the evolution of semiconductor lasers, with a focus on its application at the nanoscale level in the development of quantum dot and nanopore lasers. Recent applications will be discussed including applications to integrated photonics and quantum photonics, such as patterned single-photon sources.

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来源期刊

Progress in Quantum Electronics 工程技术-工程：电子与电气

CiteScore

18.50

自引率

0.00%

发文量

审稿时长

150 days

期刊介绍： Progress in Quantum Electronics, established in 1969, is an esteemed international review journal dedicated to sharing cutting-edge topics in quantum electronics and its applications. The journal disseminates papers covering theoretical and experimental aspects of contemporary research, including advances in physics, technology, and engineering relevant to quantum electronics. It also encourages interdisciplinary research, welcoming papers that contribute new knowledge in areas such as bio and nano-related work.