探索SrxZn1-xO纳米材料的光电化学性质及其在E133食用色素光催化降解和指纹检测中的广泛应用

IF 3.9 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
A. Meribai , I. Mansouri , H. Lahmar , S. Douafer , S. Boulahlib , M. Özacar , Y. Bessekhouad
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引用次数: 0

摘要

本文研究了不同锶含量的SrxZn1-xO材料的成功制备,并重点介绍了相关的结构、光电化学、光活性和指纹检测性能。利用XRD、SEM成像、EDAX(带作图)、UV-Vis漫反射(UV-Vis DRS)光谱、光致发光(PL)光谱和光电化学技术(包括J-V图、Tafel图和Mott-Schottky图,也应用EIS图)来评价所制备材料的性能。所有SrxZn1-xO材料均生成纯纤锌矿相,颗粒晶体范围为42 ~ 48 nm。EDAX光谱鉴定出Sr的存在,具有较高的分布均匀性。直接跃迁(3.232 eV- 3.255 eV)和间接光学跃迁(3.132 eV, - 3.176 eV)发生。乌尔巴赫能量由92.93 meV降至51.65 meV。光电化学表征表明,SrxZn1-xO材料具有n型电导率,光电流起始电位Von(−0.041 VECS-0.090 VECS)、平带电位Vfb(−0.113 VECS-−0.239 VECS)和载流子浓度ND (2.114 × 1027 cm−1 - 12.248 × 1028 cm−1)与Sr含量有轻微关系。通过等效电路建立的EIS模型显示出Sr含量依赖性,生成的电化学体系受动力学控制。成功地研究了SrxZn1-xO对E133的光催化降解。在pH为8的条件下,Sr0.1Zn0.9O得到了最佳构型,在不到42 min的时间内完全降解,符合一级动力学模型(k = 6.52 10-2 min−1)。根据COD参数,矿化与变色共发生(42 min)。使用SrxZn1-xO纳米颗粒检测各种基底上的指纹,包括玻璃表面,厨房容器和塑料片,是成功的。Sr0.05Zn0.95O和Sr0.1Zn0.9O制成的材料都被认为是有希望用于法医用途的候选材料。从交叉学科的角度阐明了sr的作用机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Exploring the photoelectrochemical properties of SrxZn1-xO nanomaterials and versatile applications to photocatalytic degradation of E133 food coloring and fingerprint detection

Exploring the photoelectrochemical properties of SrxZn1-xO nanomaterials and versatile applications to photocatalytic degradation of E133 food coloring and fingerprint detection
This work investigates the successful preparation of SrxZn1-xO materials at various Sr content in which the related structural, photoelectrochemical, photo activity, and fingerprint detection properties are highlighted. XRD, SEM imaging, EDAX (with mapping), UV–visible diffuse reflectance (UV–Vis DRS) spectroscopy, photoluminescence (PL) spectroscopies, and photoelectrochemical techniques (including J-V, Tafel, and Mott-Schottky plots, also EIS diagrams are applied) are the used technics to evaluate the properties of the prepared materials. The pure wurtzite phase is generated for all SrxZn1-xO materials with particle crystallites ranging from 42 to 48 nm. EDAX spectroscopies identify Sr presence with high distribution homogeneity. Both direct (3.232 eV- 3.255 eV) and indirect optical (3.132 eV, −3.176 eV) transitions occur. Also, the Urbach energy abated from 92.93 meV to 51.65 meV. Photoelectrochemical characterization indicates that SrxZn1-xO materials are of n-type conductivity with a slight dependence on photocurrent onset potential Von (−0.041 VECS-0.090 VECS), the flat band potential Vfb (−0.113 VECS- −0.239 VECS), and charge carriers concentration ND (2.114 × 1027 cm−1 –12.248 × 1028 cm−1) with Sr content. Also, the EIS modeling through the equivalent circuit shows Sr content dependence, and the generated electrochemical systems are under kinetic control. Sunlight-assisted photodegradation of E133 over SrxZn1-xO was successfully investigated. The optimum configuration is obtained with Sr0.1Zn0.9O at pH 8, demonstrating a complete degradation in less than 42 min and following a first-order kinetic model (k = 6.52 10-2 min−1). According to the COD parameters, mineralization co-occurs with discoloration (42 min). Using SrxZn1-xO nanoparticles to detect the fingerprints on various substrates, including glass surfaces, kitchen vessels, and plastic sheets, was successful. Materials made of Sr0.05Zn0.95O and Sr0.1Zn0.9O were both considered promising candidates for forensic use. Mechanisms of Sr-acting are clarified in the light of interdisciplinary studies.
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来源期刊
Materials Science and Engineering: B
Materials Science and Engineering: B 工程技术-材料科学:综合
CiteScore
5.60
自引率
2.80%
发文量
481
审稿时长
3.5 months
期刊介绍: The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.
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