一个1131kb /mm2 14.0 ~ 53.3 tops /W 8位模拟辅助数字内存计算与混合本地刷新eDRAM的注意力计算

IF 4.6 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of Solid-state Circuits Pub Date : 2025-07-03 DOI:10.1109/jssc.2025.3580366

Jiahao Song, Xiyuan Tang, Bocheng Xu, Haikang Diao, Haoyang Luo, Zihan Wu, Yuan Wang, Runsheng Wang, Ru Huang

引用次数: 0

摘要

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 1131-kb/mm2 14.0-to-53.3-TOPS/W 8-bit Analog-Assisted Digital Compute-in-Memory With Hybrid Local-Refresh eDRAM for Attention Computing

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来源期刊

IEEE Journal of Solid-state Circuits 工程技术-工程：电子与电气

CiteScore

11.00

自引率

20.40%

发文量

351

审稿时长

3-6 weeks

期刊介绍： The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.