在 28-nm CMOS 中实现占空比开关 30-Gb/s 突发模式 CDR，锁定时间为 1.6-ns

IF 4.6 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of Solid-state Circuits Pub Date : 2025-04-10 DOI:10.1109/jssc.2025.3556524

Xin Wang, Achim Vandierendonck, Bruno Govaerts, Tinus Pannier, Warre Geeroms, Caro Meysmans, Johan Bauwelinck, Guy Torfs

引用次数: 0

摘要

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Duty-Cycle Switching 30-Gb/s Burst-Mode CDR With 1.6-ns Locking Time in 28-nm CMOS

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来源期刊

IEEE Journal of Solid-state Circuits 工程技术-工程：电子与电气

CiteScore

11.00

自引率

20.40%

发文量

351

审稿时长

3-6 weeks

期刊介绍： The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.