拓扑绝缘体Bi2Se3的简易一锅配方及其热电性能

IF 4.3 2区 化学 Q2 CHEMISTRY, MULTIDISCIPLINARY
Anil Kumar BM, Rittika Dhar, Shuva Biswas, Satya Narayan Guin
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引用次数: 0

摘要

具有层状结构和各向异性键合的重p嵌段金属硫族化合物拓扑材料对热电学具有重要意义。用简单的化学路线合成这类材料具有重要意义。在这里,我们提出了一种低温、简便、一锅且经济高效的拓扑绝缘体Bi2Se3纳米片合成方法。该材料表现出优异的电传输和低导热性,导致480 K时的峰值热电性能(ZT)为⁓0.41。此外,在环境条件下合成Bi2S3纳米颗粒表明了该方法的通用性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Facile One-Pot Recipe for Topological Insulator Bi2Se3 and Thermoelectric Properties
Topological materials from heavy p-block metal chalcogenides having layered structures and anisotropic bonding are of immense importance for thermoelectrics. Synthesis of such materials with simple chemical routes is of high significance. Here, we present a low-temperature, facile, one-pot, and cost-effective synthesis of topological insulator Bi2Se3 nanosheets. The material demonstrates excellent electrical transport and low thermal conductivity, leading to a peak thermoelectric figure of merit (ZT) of ⁓0.41 at 480 K. Additionally, the synthesis of Bi2S3 nanoparticles under ambient conditions suggests the versatility of the method.
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来源期刊
Chemical Communications
Chemical Communications 化学-化学综合
CiteScore
8.60
自引率
4.10%
发文量
2705
审稿时长
1.4 months
期刊介绍: ChemComm (Chemical Communications) is renowned as the fastest publisher of articles providing information on new avenues of research, drawn from all the world''s major areas of chemical research.
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