Tuning Structural and Topological Properties of Silicon-Based Orthorhombic Crystals for Enhanced Radiation Shielding

This study explores γ-radiations shield character of select Si-based orthorhombic crystals, specifically CaSrSi, BaMgSi, MgAlSi, and MgSrSi, to assess their potential for γ-ray shielding applications. Utilizing Hirshfeld topological geometries (HTGs), investigation of the structural and compositional characteristics that contributes to these materials' effectiveness in attenuating high-energy photons. By analyzing the essential parameters such as the MAC, LAC, and Z_eff, the study demonstrate that BaMgSi crystal, in particular, exhibits a superior capacity for radiation attenuation due to its higher MAC ∈ [0.039, 48.280] cm².g⁻¹, LAC ∈ [0.144, 179] cm⁻¹ and Z_eff ∈ [37, 48] values in the studied energy range. The findings reveal a correlation between charge densities of HTGs and LAC values, indicating that the optimization of these topological parameters enhances the materials' shielding performance. The study highlights the potential of these crystals for various applications where effective radiation shielding is crucial. This research provides important prospective into designing of advanced crystals with improved attenuation capabilities for future innovations in radiation protection technologies.