2英寸Ca3Ta(Ga,Al)3Si2O14块状单晶的连续生长和均匀性

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2024-11-22 DOI:10.1016/j.jcrysgro.2024.128013

Yuui Yokota , Yuji Ohashi , Yasuhiro Shoji , Akira Yoshikawa

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引用次数: 0

摘要

采用Czochralski （Cz）法，利用晶体生长和再充电后的残余熔体，连续生长出了直径为2英寸的langasite型Ca3Ta(Ga,Al)3Si2O14 （CTGAS）压电体单晶。采用连续晶体生长工艺生长出无裂纹的第一和第二大块单晶。然而，第三块体单晶中出现了许多裂纹，这表明裂纹是由于化学计量成分和同量成分的差异引起的再充注过程中熔体成分的变化而产生的。利用超声波对速度分布进行评价，在块体单晶的中心观察到一个低泄漏表面声波（LSAW）速度区域。

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Continuous crystal growth and homogeneity of 2-inch Ca3Ta(Ga,Al)3Si2O14 bulk single crystals

Langasite-type Ca₃Ta(Ga,Al)₃Si₂O₁₄ (CTGAS) piezoelectric bulk single crystals with a 2-inch diameter were continuously grown by the Czochralski (Cz) method using the residual melt after crystal growth and recharging. The first and second bulk single crystals without cracks were grown using a continuous crystal growth process. However, the third bulk single crystal included many cracks, suggesting that the cracks were generated because of the change in melt composition by the recharging process originating from the difference between the stoichiometric and congruent compositions. By evaluating the velocity distribution using ultrasonic waves, an area with low leaky surface acoustic wave (LSAW) velocity was observed at the center of the bulk single crystal.

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.