利用 18O 示踪剂进行多氧化剂环境中的高温氧化研究

IF 2.1 3区 材料科学 Q2 METALLURGY & METALLURGICAL ENGINEERING
Juho Lehmusto, Anton Ievlev, James Kurley III, Bruce A. Pint
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引用次数: 0

摘要

本研究的目的是利用富含 18O 的水更好地了解 H2O 在高温氧化中的作用。水蒸气中的氧比空气中的氧更具活性,18O 富集在所形成的富铬和富铝氧化物的最外层。添加了 Al 和/或 Ti 的合金显示出内部氧化的迹象,但在合金内部氧化的位置,18O 并未富集。根据合金铝含量的不同,氧化物从铬鳞下面的铝氧化到外部氧化铝鳞的形成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-Temperature Oxidation Study in a Multi-Oxidant Environment Using 18O Tracer

The goal of this study was to use 18O-enriched water to better understand the role of H2O in high-temperature oxidation. Seven model and three commercial M-Cr and M-Cr-Al alloys were studied in air with 10% of H2O at 800 °C for 5 h. Oxygen from water vapor was more reactive than oxygen from the air and 18O enriched at the outermost layers of the formed Cr- and Al-rich oxides. Alloys with Al and/or Ti additions showed signs of internal oxidation but 18O was not enriched inside the alloy in locations with internal oxidation. Depending on the alloy Al content, the oxide went from Al oxidation beneath a chromia scale to external alumina scale formation.

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来源期刊
Oxidation of Metals
Oxidation of Metals 工程技术-冶金工程
CiteScore
5.10
自引率
9.10%
发文量
47
审稿时长
2.2 months
期刊介绍: Oxidation of Metals is the premier source for the rapid dissemination of current research on all aspects of the science of gas-solid reactions at temperatures greater than about 400˚C, with primary focus on the high-temperature corrosion of bulk and coated systems. This authoritative bi-monthly publishes original scientific papers on kinetics, mechanisms, studies of scales from structural and morphological viewpoints, transport properties in scales, phase-boundary reactions, and much more. Articles may discuss both theoretical and experimental work related to gas-solid reactions at the surface or near-surface of a material exposed to elevated temperatures, including reactions with oxygen, nitrogen, sulfur, carbon and halogens. In addition, Oxidation of Metals publishes the results of frontier research concerned with deposit-induced attack. Review papers and short technical notes are encouraged.
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