用于同时测量海水温度和盐度的集成式混合光纤马赫-泽恩德干涉仪

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2024-11-15 DOI:10.1016/j.sna.2024.116065

Jincheng Zhao , Ruijie Liu , Mingyue Wang , Jian Zhao , Ya-nan Zhang , Yong Zhao

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引用次数: 0

摘要

提出了一种基于飞秒激光微加工的集成式混合马赫-泽恩德（MZ）干涉仪，用于同时测量海水温度和盐度。利用飞秒激光在多模光纤（MMF）上加工出两个微腔，形成三光束马赫-泽恩德（MZ）干涉仪，用于测量海水温度和盐度。模拟结果表明，传感器对温度和盐度的响应仅受微腔长度的影响，而微腔深度则与传感器的结构强度有关。实验结果表明，在 5 ∼ 40 ℃ 的温度范围内，传感器的温度灵敏度为 4.401 nm/℃；在 3.52 ‰ ∼ 59.41 ‰ 的盐度范围内，传感器的盐度灵敏度为 0.784 nm/‰。该传感器具有灵敏度高、集成度高的优点，有望应用于海水多参数测量。

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Integrated hybrid optical fiber Mach-Zehnder interferometers for simultaneous measurement of seawater temperature and salinity

An integrated hybrid Mach-Zehnder (MZ) interferometer based on femtosecond laser micromachining for simultaneous measurement of seawater temperature and salinity was proposed. Two microcavities were machined on the multimode fiber (MMF) using a femtosecond laser to form a three-beams MZ interferometer and used to measure seawater temperature and salinity. The simulation results showed that the response of the sensor to temperature and salinity was only affected by the length of the microcavity, and the depth of the microcavity responded to the structural strength of the sensor. The experimental results showed that the temperature sensitivity of the sensor was 4.401 nm/℃ in the temperature range of 5 ∼ 40 ℃, and the salinity sensitivity was 0.784 nm/‰ in the salinity range of 3.52 ‰ ∼ 59.41 ‰. The sensor had the advantages of high sensitivity and integration, which was expected to be applied in the measurement of seawater multi-parameters.

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...