Ga vacancies as dominant intrinsic acceptors in Sn-doped𝛽−Ga2⁢O3revealed by positron annihilation spectroscopy

The conductive properties and defect structure of Sn-doped 𝛽−Ga2⁢O3 bulk materials with different Sn concentrations are studied in this work. The calculations and experiments of positron annihilation spectroscopy clarify the existence of Ga monovacancies of high concentrations in these semiconductors. The temperature dependencies of positron annihilation parameters and the linear relationship between compensating carrier concentration and Ga vacancy concentration clearly reveal that the −3 charged Ga monovacancies are the dominant intrinsic acceptors in Sn-doped 𝛽−Ga2⁢O3.