基于 ZnO/GO/CdS 纳米复合材料的光敏 RFID 传感器

IF 3.9 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering B-advanced Functional Solid-state Materials Pub Date : 2024-10-30 DOI:10.1016/j.mseb.2024.117782

Fengjuan Miao , Bingchen Li , Tangjian Yao , Xiaojie Liu , Bairui Tao , Paul K. Chu

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引用次数: 0

摘要

设计并制作了一种由氧化锌（ZnO）/氧化石墨烯（GO）/硫化镉（CdS）纳米复合材料组成的无芯片射频识别（RFID）光敏传感器，用于远程监测环境中的光线。标签由介电层、谐振结构和敏感层组成。介电层由廉价的环氧树脂制成。通过用数字间电容（idc）取代传统 ELC 谐振器的平行板电容，获得了单位面积电容更大的 ELC idc 谐振器，并通过 HFSS 仿真进行了优化。使用矢量网络分析仪对标签进行了评估，实验结果证实了光敏标签的可行性。在 0-49 klx 的光环境中，光敏标签的灵敏度为 895.31 Hz/lx，从而满足了环境光监测的要求。

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Photosensitive RFID sensor based on ZnO/GO/CdS nanocomposite

A chipless radio frequency identification (RFID) photosensitive sensor composed of zinc oxide (ZnO) / graphene oxide (GO) / cadmium sulfide (CdS) nanocomposites is designed and fabricated for remote monitoring of light in the environment. The label consists of a dielectric layer, a resonant structure, and a sensitive layer. The dielectric layer is made of inexpensive epoxy resin. By replacing the parallel plate capacitance of the traditional ELC resonator with the interdigital capacitance (idc), an ELC idc resonator with a larger capacitance per unit area is obtained and optimized by HFSS simulation. The label is evaluated using a vector network analyzer, and the experimental results confirm the feasibility of the photosensitive label. In the light environment of 0–49 klx, the sensitivity of the photosensitive label is 895.31 Hz/lx thus meeting the requirement for the monitoring of environmental light.

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来源期刊

Materials Science and Engineering B-advanced Functional Solid-state Materials 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.