Doped diamane: An efficient electron/hole collection layer in HIT solar cell

In this report, the optimization of various parameters of electron/hole collection layer, buffer layer and active layer of the HIT solar cell have been carried out by using AFORS-HET software. Novelty of the reported work is the use of doped diamane as an effective electron/hole collection layers for the enhanced performance of the HIT solar cell. Here, n and p-type diamane layers are used as the electron/hole collection layers or the emitter and back surface field (BSF) layer, respectively. Considering the absorption loss at the front contact, the maximum efficiency (η) for the fully optimized cell is found 27.88 % with open circuit voltage (V_OC) 691.1 mV, current density (J_SC) 49.3 mA/${\text{cm}}^2$ and fill factor (FF) 81.83 % whereas, in conventional HIT cell with η of 25.6 % and J_SC of 41.8 mA/cm² reported by Masuko et. al. [7]. If zero absorption loss is considered, the efficiency could exceed its theoretical limit. A detailed study has also been done on the role of texturing angle and absorption loss found at the front contact of the solar cell.