块状 SrTiO3 单晶的非线性光激发负差分电导率

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2024-10-10 DOI:10.1002/aelm.202400285

Alexander Connor Newing, Marin Alexe

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引用次数: 0

摘要

研究了名义上纯净的块状 SrTiO3 光激发[100]、[110]和[111]晶向的电流密度曲线，发现这些晶向之间存在很强的各向异性。在[110]方向上，电流-电压特性有两个不同的峰值，并有两个不同的负差导率区域。这两个区域可以用两种不同的机制来解释，一种是基于场增强的阱，另一种是基于双谷导带与阱相互作用的转移电子效应。光致发光光谱显示，铬杂质是电流密度各向异性的潜在根源。在高温和低光通量范围内，光电导效应遵循经典的 Hecht 模型，其 mu-tau (μτ) 值高达 10-4 cm2 V-1。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Non-linear Photoexcited Negative Differential Conductivity in Bulk SrTiO3 Single Crystals

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Non-linear Photoexcited Negative Differential Conductivity in Bulk SrTiO3 Single Crystals

Current density curves for the [100], [110], and [111] crystallographic directions of photoexcited, nominally pure, bulk SrTiO₃ are studied, revealing a strong anisotropy between these crystallographic directions. In the [110] direction two distinct peaks in the current-voltage characteristics with two different negative differential conductivity regions are distinguishable. The two regions can be explained with two different mechanisms, one based on field-enhanced trapping and the second the transferred electron effect based on two-valley conduction band interacting with a trap. Photoluminescence spectra revealed Cr impurities to be the potential origin of the current density anisotropy. In the high temperatures range and low photon fluxes the photoconductivity follows a classical Hecht model with a mu-tau (μτ) value up to 10⁻⁴ cm² V⁻¹.

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.