抗量子点转换光电设备中的氧气/湿气渗透

IF 3.1 3区物理与天体物理 Q2 PHYSICS, APPLIED

Journal of Physics D: Applied Physics Pub Date : 2024-09-09 DOI:10.1088/1361-6463/ad759d

Xuan Yang, Bin Xie, Xiaobing Luo

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引用次数: 0

摘要

量子点（QDs）是一种前景广阔的半导体发光纳米晶体，具有卓越的光电特性。遗憾的是，这些纳米晶体暴露在潮湿环境中时非常脆弱。氧气和水分分子会侵蚀 QDs 的结构并降低其发光能力，这严重阻碍了 QDs 在光电设备中的广泛应用。因此，在这些 QD 转换器件的封装过程中防止氧气/湿气渗透就显得尤为重要。在本综述中，我们将简要介绍氧/湿气诱导的 QDs 降解机制，然后介绍渗透理论。随后，我们从封装的角度回顾了一些抗氧/湿气渗透的策略，并结合渗透理论对其进行了分析。最后，我们概述了开发转换为光电器件的 QDs 高效抗氧/湿解决方案的未来方向。

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Resisting oxygen/moisture permeation in quantum dots converted optoelectronic devices

Quantum dots (QDs) are promising semiconducting luminous nanocrystals with superior optoelectronic characteristics. Unfortunately, these nanocrystals are fragile when exposed to humid environment. Oxygen and moisture molecules could erode QDs’ structure and degrade their luminous ability, which severely hinders the wide application of QDs in optoelectronic devices. Therefore, it is significantly important to resist oxygen/moisture permeation in the packaging of these QDs converted devices. In this review, we briefly introduce the oxygen/moisture-induced degradation mechanism of QDs and then the permeation theories. Subsequently, we review some strategies for resisting oxygen/moisture permeation from a packaging perspective, and analyze them with the permeation theories. Finally, we outline some future directions for developing efficient oxygen/moisture resistance solutions of QDs converted optoelectronic devices.

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来源期刊

Journal of Physics D: Applied Physics 物理-物理：应用

CiteScore

6.80

自引率

8.80%

发文量

835

审稿时长

2.1 months

期刊介绍： This journal is concerned with all aspects of applied physics research, from biophysics, magnetism, plasmas and semiconductors to the structure and properties of matter.