研究由 Sm(III)激活的多用途橘红色发光钒基纳米材料在潜在指纹识别和光物理应用中的用途

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Neeraj Sehrawat, Poonam Devi, Hina Dalal, Diksha Solanki, Ojas Garg, Mukesh Kumar, Sapana Garg
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引用次数: 0

摘要

在此,我们报告了利用简便、经济、省时的尿素辅助溶液燃烧法合成 Sm3+ 活化 Ca8ZnBi(VO4)7 纳米磷化物的情况。所制备的粉末样品在 900 °C 下退火后,对其结构、形态和光学特性进行了检测。通过记录 X 射线衍射图样,验证了合成荧光粉的空间群和三方相 R3c (161)。利用 X 射线能谱仪和扫描电子显微镜对荧光粉的形态和元素组成进行了研究。使用透射电子显微镜(TEM)检查了制备的纳米荧光粉的粒度。透射电子显微镜图像显示,在纳米级范围内出现了不均匀的颗粒聚集。我们捕捉了合成荧光粉的激发光谱和发射光谱,以检查它们的光致发光(PL)行为。当 Ca8ZnBi (VO4)7 荧光材料暴露在 408 纳米波长的紫外光下时,我们观察到了特征性的橘红色 Sm3+ 发光,这分别对应于 605 纳米波长的 4G5/2 → 6H7/2 转变。使用 Dexter 理论和 Inokuti-Hirayama (I-H) 模型证实,相邻离子之间的能量迁移是造成浓度淬灭的原因,5 摩尔% 是掺杂离子的最佳浓度。利用漫反射(DR)光谱,确定了 Ca8ZnBi(VO4)7(3.18 eV)和 Ca8ZnBi0.95Sm0.05(VO4)7(3.15 eV)的 Eg(带隙)值。此外,还对量子效率(64.74 %)、辐射寿命(0.6329 ms)和色坐标(0.6522,0.3476)进行了详细评估。这些令人震惊的结果表明,合成的纳米材料适用于制造发光二极管、固有指纹识别和其他光物理要求。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Investigating multipurpose reddish-orange emitting vanadate-based nanomaterials activated by Sm(III) for use in latent fingerprinting and photophysical applications

Investigating multipurpose reddish-orange emitting vanadate-based nanomaterials activated by Sm(III) for use in latent fingerprinting and photophysical applications

Here, we report the synthesis of Sm3+- activated Ca8ZnBi(VO4)7 nanophosphors using the easy, economic, and time-saving urea-aided solution combustion method. The fabricated powder samples that were annealed at 900 °C were examined for their structural, morphological, and optical characteristics. By recording the X-ray diffraction pattern, R3c (161), the space group and the trigonal phase of synthesized phosphor, was verified. Using X-ray energy-dispersive spectroscopy and scanning electron microscopy, the morphology and elemental composition of the phosphors were examined. Using a transmission electron microscope (TEM), the fabricated nanophosphor particle size was examined. A TEM image demonstrates the occurrence of uneven particle agglomeration in the nanoscale range. The synthesized phosphors’ excitation, emission spectra were captured to examine their photoluminescence (PL) behavior. We observed characteristic reddish-orange Sm3+ PL emission when the produced Ca8ZnBi (VO4)7 phosphors material was exposed to UV light at 408 nm, this corresponded to the transition 4G5/2 → 6H7/2, at 605 nm, respectively. Dexter’s theory and the Inokuti–Hirayama (I–H) model were used to confirm that the energy migration among neighbor ions is found to be responsible for concentration quenching and 5 mol % is found to be the optimal concentration of dopant ion. Using the diffuse reflectance (DR) spectrum, the Eg (bandgap) values for Ca8ZnBi(VO4)7 (3.18 eV) and Ca8ZnBi0.95Sm0.05(VO4)7 (3.15 eV) were determined. In addition, a detailed evaluation was conducted on the quantum efficiency (64.74 %), radiative lifetime (0.6329 ms), and color coordinates (0.6522,0.3476). These astounding outcomes demonstrated the synthesized nanomaterials suitability for creating wLEDs, inherent fingerprinting, and other photophysical claims.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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