通过溴化甲基铵添加工程获得高导电性扁平溴化铯铅包晶石晶粒

IF 3.2 Q2 CHEMISTRY, PHYSICAL
Energy advances Pub Date : 2024-08-26 DOI:10.1039/d4ya00487f
Chandra Shakher Pathak, Deepak Aloysius, Satyajit Gupta, Sabyasachi Mukhopadhyay, Eran Edri
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引用次数: 0

摘要

由无机溴化铯铅(CsPbBr3)制成的过氧化物太阳能电池显示出异常高的开路电位。然而,它们的光电效率仍然落后于碘化卤化物类包晶石。本研究采用多步溶液旋涂工艺制作了 CsPbBr3 薄膜。CsPbBr3 包晶薄膜由扁平和圆形晶粒组成,每种晶粒类型的光电流都不平衡。有趣的是,添加甲基溴化铵(MABr)作为添加剂后,在纳米尺度上进行原子力显微镜(c-AFM)观察时,发现扁平晶粒的电流明显增加。添加 MABr 后,具有高导电性晶粒的过氧化物薄膜具有良好的光电质量,能更好地传输电荷,从而提高功率转换效率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Highly conductive flat grains of cesium lead bromide perovskites via additive engineering with methylammonium bromide

Highly conductive flat grains of cesium lead bromide perovskites via additive engineering with methylammonium bromide
Perovskite solar cells made of inorganic cesium lead bromide (CsPbBr3) display unusually high open-circuit potentials. Yet, their photovoltaic efficiency is still lagging behind that of iodide-based halide perovskites. In this study, a multistep solution spin coating process is used to create a CsPbBr3 film. The CsPbBr3 perovskite film consists of flat and rounded grains, and the photocurrent of each grain type is imbalanced. Interestingly, a significant current increase in flat grains is observed when conducting atomic force microscopy (c-AFM) at the nanoscale after the addition of methyl ammonium bromide (MABr) as an additive. The addition of MABr results in good optoelectronic quality of perovskite films with highly conductive grains and enables better charge transport and hence improved power conversion efficiency.
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