杂质在 GaP 单晶伽马射线诱导发光中的作用

IF 1.1 4区物理与天体物理 Q3 NUCLEAR SCIENCE & TECHNOLOGY

Radiation Effects and Defects in Solids Pub Date : 2024-08-20 DOI:10.1080/10420150.2024.2391746

Toshihiro Nakamura, Tomoaki Nishimura, Kazuo Kuriyama, Tohru Nakamura, Atsushi Kinomura

引用次数: 0

摘要

在室温下，从掺杂杂质的磷化镓（GaP）单晶硅片上观测到了伽马射线诱导发光。研究了未掺杂和掺杂磷化镓单晶硅片的发光特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Role of impurities in gamma-ray induced luminescence from GaP single crystal

Gamma-ray-induced luminescence is observed from impurity-doped gallium phosphide (GaP) single crystal wafer at room temperature. The luminescence properties are studied for the undoped and impurity...

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来源期刊

Radiation Effects and Defects in Solids 物理-核科学技术

CiteScore

1.60

自引率

20.00%

发文量

107

审稿时长

4 months

期刊介绍： The Journal covers a wide range of topics under radiation and plasma sciences. The range of contributions encompasses: radiation physics; radiochemistry, radiobiology and physical effects of medical irradiation, including research on radiative cell degeneration; optical, electrical and mechanical effects of radiation, and their secondary effects such as diffusion and particle emission from surfaces; plasma techniques and plasma phenomena. On plasma science the Journal covers all areas of fusion, space and low temperature plasmas.