用于检测带电/中性生物分子的纳米级沟槽栅工程 JAM Gate-All-Around (TGE-JAM-GAA) 无标签生物场效应晶体管

IF 1.3 4区计算机科学 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IETE Journal of Research Pub Date : 2024-08-29 DOI:10.1080/03772063.2024.2368636

Shivani Yadav, Sonam Rewari

引用次数: 0

摘要

本手稿提出了一种沟槽栅极工程无结累积模式栅极全方位（TGE-JAM-GAA）生物场效应晶体管结构，并对其进行了批判性分析，以实现无标记识别。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Nanoscale Trench Gate Engineered JAM Gate-All-Around (TGE-JAM-GAA) Label-Free BioFET for Charged/Neutral Biomolecules Detection

In this manuscript, a Trench Gate Engineered Junctionless Accumulation Mode Gate-All-Around (TGE-JAM-GAA) BioFET structure has been proposed and critically analyzed for the label-free identificatio...

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IETE Journal of Research 工程技术-电信学

CiteScore

3.30

自引率

6.70%

发文量

308

期刊介绍： IETE Journal of Research is a Bimonthly journal published by the Institution of Electronics and Telecommunication Engineers (IETE), India. It publishes scientific and technical papers describing original research work or novel product/process development. Occasionally special issues are brought out on new and emerging research areas. IETE Journal of Research is useful to researchers, engineers, scientists, teachers, managers and students who are interested in keeping a track of original research and development work being carried out in the broad area of electronics, telecommunications, computer science and engineering and information technology.