基于集成无源器件技术的低插入损耗、宽截止带小型化片上 BPF

IF 1 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Fuwang Li, Yi-Feng Cheng, Gaofeng Wang
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引用次数: 0

摘要

本研究介绍了一种新型带通滤波器 (BPF),其特点是插入损耗(IL)低,且存在两个基于集成无源器件(IPD)技术的传输零点(TZ)。该设计包含一个低通滤波器和一个高通滤波器,这两个滤波器都具有很强的带外抑制性能。TZ 的控制结构是通过级联电感和电容元件来构建的。TZ 控制结构主要在高频产生 TZ,从而进一步增强了阻带的带宽。首先构建了拟议 BPF 的块状电路,并提供了严格的设计公式,以帮助构建拟议设计。在原理图优化之后,第二步涉及基于特定 IPD 工艺的布局优化和仿真。安装在印刷电路板上的实验结果表明,其带宽从 3.3 GHz 到 4.2 GHz 不等,中心频率的 IL 值仅为 2.0 dB。此外,该 BPF 还实现了令人印象深刻的边带抑制,在 0-1.7 GHz 范围内超过 18 dB,在 9-15 GHz 范围内超过 30 dB。值得注意的是,该 BPF 结构异常紧凑,仅为 0.5 mm × 1.0 mm(0.006λc × 0.012λc)。基于 IPD 技术,所提出的 BPF 性能出众,在如此小巧的体积内实现了最小的 IL 和广泛的边带抑制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A miniaturized on-chip BPF with low insertion loss and wide stopband based on integrated passive device technology

In this study, a novel bandpass filter (BPF) characterized by low insertion loss (IL) and the presence of two transmission zeros (TZs) based on integrated passive device (IPD) technology is introduced. The design incorporates a low-pass filter and a high-pass filter which both exhibit strong out-of-band suppression performance. The control structure for TZs is constructed by cascading the inductance and capacitance components. The TZ controlling structure primarily generates TZs at high frequencies, resulting in a further bandwidth enhancement in the stopband. The lumped circuit of the proposed BPF is first constructed, and rigorous design formulas are provided to assist in constructing the proposed design. After schematic optimization, the second step involves layout optimization and simulation based on the specific IPD process. Experimental results mounted on a printed circuit board demonstrate that the bandwidth spans from 3.3 to 4.2 GHz with an IL of only 2.0 dB at the center frequency. Additionally, this BPF achieves impressive sideband suppression, exceeding 18 dB in the 0–1.7 GHz range and 30 dB in the 9–15 GHz range. Remarkably, the BPF is exceptionally compact with only 0.5 mm × 1.0 mm (0.006λc × 0.012λc). The proposed BPF exhibits outstanding performance with minimal IL and extensive sideband suppression at such a compact size based on the IPD technology.

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来源期刊
Microwave and Optical Technology Letters
Microwave and Optical Technology Letters 工程技术-工程:电子与电气
CiteScore
3.40
自引率
20.00%
发文量
371
审稿时长
4.3 months
期刊介绍: Microwave and Optical Technology Letters provides quick publication (3 to 6 month turnaround) of the most recent findings and achievements in high frequency technology, from RF to optical spectrum. The journal publishes original short papers and letters on theoretical, applied, and system results in the following areas. - RF, Microwave, and Millimeter Waves - Antennas and Propagation - Submillimeter-Wave and Infrared Technology - Optical Engineering All papers are subject to peer review before publication
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