单二维过渡金属二卤化物晶体管的性能极限和进展。

IF 26.6 1区材料科学 Q1 Engineering

Nano-Micro Letters Pub Date : 2024-08-09 DOI:10.1007/s40820-024-01461-x

Jing Chen, Ming-Yuan Sun, Zhen-Hua Wang, Zheng Zhang, Kai Zhang, Shuai Wang, Yu Zhang, Xiaoming Wu, Tian-Ling Ren, Hong Liu, Lin Han

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引用次数: 0

摘要

二维（2D）过渡金属二掺杂物（TMDs）可进行原子级操作，挑战了半导体材料的传统限制。这种能力可以克服短沟道效应，使利用二维 TMD 的电子设备取得重大进展。探索基于二维 TMD 的晶体管的尺寸和性能极限已变得非常重要。本综述全面探讨了单一二维 TMD 晶体管的这些限制。它深入探讨了微型化的影响，包括沟道长度、栅极长度、源极/漏极接触长度和介电厚度的减少对晶体管工作和性能的影响。此外，本综述还详细分析了源极/漏极接触电阻、次阈值摆动、滞后环、载流子迁移率、导通/截止比等性能参数，以及 p 型和单逻辑晶体管的发展。本综述详细介绍了单个 2D-TMD 逻辑晶体管的两种逻辑表达方式，包括电流和电压。综述还强调了基于二维 TMD 的晶体管作为存储器件的作用，重点是提高存储器的运行速度、耐用性、数据保留和消隐比，以及降低作为人工突触的存储器件的能耗。本综述展示了二维突触器件动态能耗的两种计算方法。本综述不仅总结了这一领域的技术现状，还强调了潜在的未来研究方向和应用。它强调了在探索二维晶体管的尺寸和性能边界方面的预期挑战、机遇和潜在解决方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor

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Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor

Highlights

The review provides a comprehensive summary of performance limits of the single two-dimensional transition metal dichalcogenide (2D-TMD) transistor.
The review details the two logical expressions of the single 2D-TMD logic transistor, including current and voltage.
The review demonstrates the two calculating methods for dynamic energy consumption of 2D synaptic devices.

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来源期刊

Nano-Micro Letters NANOSCIENCE & NANOTECHNOLOGY-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

32.60

自引率

4.90%

发文量

981

审稿时长

1.1 months

期刊介绍： Nano-Micro Letters is a peer-reviewed, international, interdisciplinary, and open-access journal published under the SpringerOpen brand. Nano-Micro Letters focuses on the science, experiments, engineering, technologies, and applications of nano- or microscale structures and systems in various fields such as physics, chemistry, biology, material science, and pharmacy.It also explores the expanding interfaces between these fields. Nano-Micro Letters particularly emphasizes the bottom-up approach in the length scale from nano to micro. This approach is crucial for achieving industrial applications in nanotechnology, as it involves the assembly, modification, and control of nanostructures on a microscale.