开关偏置辐照期间总剂量对 CD4007 MOSFET 影响的数值建模

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2024-07-23 DOI:10.1016/j.microrel.2024.115468

L. Sambuco Salomone , M. Garcia-Inza , J. Lipovetzky , M.V. Cassani , E. Redin , A. Faigón , S. Carbonetto

{"title":"开关偏置辐照期间总剂量对 CD4007 MOSFET 影响的数值建模","authors":"L. Sambuco Salomone , M. Garcia-Inza , J. Lipovetzky , M.V. Cassani , E. Redin , A. Faigón , S. Carbonetto","doi":"10.1016/j.microrel.2024.115468","DOIUrl":null,"url":null,"abstract":"<div><p>The response of commercial-off-the-shelf CD4007 p-channel MOSFET exposed to <sup>60</sup>Co radiation under switched-bias conditions is studied by real time monitoring the threshold voltage evolution with accumulated dose. The possibility to employ switched-bias techniques to recover threshold voltage is demonstrated. As reported for other devices, non-monotonic responses are observed. A physics-based numerical model that takes into account both charge buildup within the oxide and generation of interface traps is employed to reproduce the experimental results. The implications for dosimetry are discussed.</p></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"160 ","pages":"Article 115468"},"PeriodicalIF":1.6000,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Numerical modeling of total dose effects on CD4007 MOSFET during switched-bias irradiation\",\"authors\":\"L. Sambuco Salomone , M. Garcia-Inza , J. Lipovetzky , M.V. Cassani , E. Redin , A. Faigón , S. Carbonetto\",\"doi\":\"10.1016/j.microrel.2024.115468\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The response of commercial-off-the-shelf CD4007 p-channel MOSFET exposed to <sup>60</sup>Co radiation under switched-bias conditions is studied by real time monitoring the threshold voltage evolution with accumulated dose. The possibility to employ switched-bias techniques to recover threshold voltage is demonstrated. As reported for other devices, non-monotonic responses are observed. A physics-based numerical model that takes into account both charge buildup within the oxide and generation of interface traps is employed to reproduce the experimental results. The implications for dosimetry are discussed.</p></div>\",\"PeriodicalId\":51131,\"journal\":{\"name\":\"Microelectronics Reliability\",\"volume\":\"160 \",\"pages\":\"Article 115468\"},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2024-07-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics Reliability\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0026271424001483\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271424001483","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

通过实时监测阈值电压随累积剂量的变化，研究了现成的 CD4007 p 沟道 MOSFET 在开关偏置条件下受到钴辐射的响应。研究证明了采用开关偏压技术恢复阈值电压的可能性。与其他设备的报告一样，观察到了非单调反应。为了再现实验结果，我们采用了一个基于物理的数值模型，该模型考虑到了氧化物内部的电荷积累和界面陷阱的产生。讨论了剂量测定的意义。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Numerical modeling of total dose effects on CD4007 MOSFET during switched-bias irradiation

The response of commercial-off-the-shelf CD4007 p-channel MOSFET exposed to ⁶⁰Co radiation under switched-bias conditions is studied by real time monitoring the threshold voltage evolution with accumulated dose. The possibility to employ switched-bias techniques to recover threshold voltage is demonstrated. As reported for other devices, non-monotonic responses are observed. A physics-based numerical model that takes into account both charge buildup within the oxide and generation of interface traps is employed to reproduce the experimental results. The implications for dosimetry are discussed.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.