基于 AlScN 的 CMOS 兼容型集成电光移相器

IF 6.5 2区物理与天体物理 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Nanophotonics Pub Date : 2024-07-23 DOI:10.1515/nanoph-2024-0263

Valerie Yoshioka, Jicheng Jin, Haiqi Zhou, Zichen Tang, Roy H. Olsson III, Bo Zhen

{"title":"基于 AlScN 的 CMOS 兼容型集成电光移相器","authors":"Valerie Yoshioka, Jicheng Jin, Haiqi Zhou, Zichen Tang, Roy H. Olsson III, Bo Zhen","doi":"10.1515/nanoph-2024-0263","DOIUrl":null,"url":null,"abstract":"Commercial production of integrated photonic devices is limited by scalability of desirable material platforms. We explore a relatively new photonic material, AlScN, for its use in electro-optic phase shifting and modulation. Its CMOS-compatibility could facilitate large-scale production of integrated photonic modulators, and it exhibits an enhanced second-order optical nonlinearity compared to intrinsic AlN, indicating the possibility for efficient modulation. Here, we measure the electro-optic effect in Al0.80Sc0.20N-based phase shifters. We utilized the TM0 mode, allowing use of the r 33 electro-optic coefficient, and demonstrated V π L around 750 V cm. Since the electro-optic response is smaller than expected, we discuss potential causes for the reduced response and future outlook for AlScN-based photonics.","PeriodicalId":19027,"journal":{"name":"Nanophotonics","volume":"51 1","pages":""},"PeriodicalIF":6.5000,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"CMOS-compatible, AlScN-based integrated electro-optic phase shifter\",\"authors\":\"Valerie Yoshioka, Jicheng Jin, Haiqi Zhou, Zichen Tang, Roy H. Olsson III, Bo Zhen\",\"doi\":\"10.1515/nanoph-2024-0263\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Commercial production of integrated photonic devices is limited by scalability of desirable material platforms. We explore a relatively new photonic material, AlScN, for its use in electro-optic phase shifting and modulation. Its CMOS-compatibility could facilitate large-scale production of integrated photonic modulators, and it exhibits an enhanced second-order optical nonlinearity compared to intrinsic AlN, indicating the possibility for efficient modulation. Here, we measure the electro-optic effect in Al0.80Sc0.20N-based phase shifters. We utilized the TM0 mode, allowing use of the r 33 electro-optic coefficient, and demonstrated V π L around 750 V cm. Since the electro-optic response is smaller than expected, we discuss potential causes for the reduced response and future outlook for AlScN-based photonics.\",\"PeriodicalId\":19027,\"journal\":{\"name\":\"Nanophotonics\",\"volume\":\"51 1\",\"pages\":\"\"},\"PeriodicalIF\":6.5000,\"publicationDate\":\"2024-07-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nanophotonics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1515/nanoph-2024-0263\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanophotonics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1515/nanoph-2024-0263","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

集成光子设备的商业化生产受到理想材料平台可扩展性的限制。我们探索了一种相对较新的光子材料 AlScN，以将其用于电光移相和调制。它与 CMOS 兼容，可促进集成光子调制器的大规模生产，而且与本征 AlN 相比，它表现出更强的二阶光学非线性，这表明它有可能实现高效调制。在这里，我们测量了基于 Al0.80Sc0.20N 的移相器中的电光效应。我们利用 TM0 模式，允许使用 r 33 电光系数，并证明 V π L 约为 750 V cm。由于电光响应小于预期，我们讨论了响应降低的潜在原因以及基于 AlScN 的光子学的未来展望。

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CMOS-compatible, AlScN-based integrated electro-optic phase shifter

Commercial production of integrated photonic devices is limited by scalability of desirable material platforms. We explore a relatively new photonic material, AlScN, for its use in electro-optic phase shifting and modulation. Its CMOS-compatibility could facilitate large-scale production of integrated photonic modulators, and it exhibits an enhanced second-order optical nonlinearity compared to intrinsic AlN, indicating the possibility for efficient modulation. Here, we measure the electro-optic effect in Al0.80Sc0.20N-based phase shifters. We utilized the TM0 mode, allowing use of the r 33 electro-optic coefficient, and demonstrated V π L around 750 V cm. Since the electro-optic response is smaller than expected, we discuss potential causes for the reduced response and future outlook for AlScN-based photonics.

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来源期刊

Nanophotonics NANOSCIENCE & NANOTECHNOLOGY-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

13.50

自引率

6.70%

发文量

358

审稿时长

7 weeks

期刊介绍： Nanophotonics, published in collaboration with Sciencewise, is a prestigious journal that showcases recent international research results, notable advancements in the field, and innovative applications. It is regarded as one of the leading publications in the realm of nanophotonics and encompasses a range of article types including research articles, selectively invited reviews, letters, and perspectives. The journal specifically delves into the study of photon interaction with nano-structures, such as carbon nano-tubes, nano metal particles, nano crystals, semiconductor nano dots, photonic crystals, tissue, and DNA. It offers comprehensive coverage of the most up-to-date discoveries, making it an essential resource for physicists, engineers, and material scientists.