在常压和高压富氢气体混合物的痕量氧去除中应用按比例放大的介质势垒放电反应器

IF 1.5 4区 工程技术 Q3 ENGINEERING, CHEMICAL
Philipp Wirth, Christian Oberste-Beulmann, Tim Nitsche, Prof. Martin Muhler, Prof. Peter Awakowicz
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引用次数: 0

摘要

介质阻挡放电(DBD)经常用于各种气体转换过程。对于工业应用而言,低流动阻力和可扩展性至关重要。本研究采用了基于表面介质阻挡放电(SDBD)的十倍放大反应器,用于去除 H2/N2/O2 混合气体中的氧气痕迹。针对不同的氧气混合物,研究了十种电极配置的反应器的转化效率,观察到高转化率随着流速的增加而降低,但当压力升至 2 bar(g) 时,转化率保持不变。使用了基于碳化硅场效应晶体管(SiC-FET)的新型发生器,并与基于传统金属氧化物半导体场效应晶体管(MOS-FET)的发生器进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Application of a Scaled-up Dielectric Barrier Discharge Reactor in the Trace Oxygen Removal in Hydrogen-Rich Gas Mixtures at Ambient and Elevated Pressure

Application of a Scaled-up Dielectric Barrier Discharge Reactor in the Trace Oxygen Removal in Hydrogen-Rich Gas Mixtures at Ambient and Elevated Pressure

Dielectric barrier discharges (DBDs) are frequently utilized in various gas conversion processes. For industrial applications a low flow resistance and scalability are crucial. In this study a tenfold scaled-up reactor based on a surface dielectric barrier discharge (SDBD) was employed for the removal of oxygen traces from H2/N2/O2 gas mixtures. The conversion efficiency of the reactor with ten electrode configurations was investigated for different admixtures of O2, and high degrees of conversion were observed that decreased with increasing flow rate, but remained constant when raising the pressure to 2 bar(g). A new generator based on silicon carbide field-effect transistors (SiC-FETs) was used and compared to a generator based on classical metal oxide semiconductor field-effect transistors (MOS-FETs).

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来源期刊
Chemie Ingenieur Technik
Chemie Ingenieur Technik 工程技术-工程:化工
CiteScore
3.40
自引率
15.80%
发文量
601
审稿时长
3-6 weeks
期刊介绍: Die Chemie Ingenieur Technik ist die wohl angesehenste deutschsprachige Zeitschrift für Verfahrensingenieure, technische Chemiker, Apparatebauer und Biotechnologen. Als Fachorgan von DECHEMA, GDCh und VDI-GVC gilt sie als das unverzichtbare Forum für den Erfahrungsaustausch zwischen Forschern und Anwendern aus Industrie, Forschung und Entwicklung. Wissenschaftlicher Fortschritt und Praxisnähe: Eine Kombination, die es nur in der CIT gibt!
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