我们还能找到理想的 Memristor 吗?

Magnetism Pub Date : 2024-07-16 DOI:10.3390/magnetism4030014
Frank Zhigang Wang
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引用次数: 0

摘要

1971年,Chua定义了一种连接磁通量φ和电荷q的理想忆阻器。在带有载流导体的磁块中,我们发现物理磁通量φ和物理电荷q之间的直接相互作用具有忆阻器的性质,即时间不变的φ-q曲线是非线性、连续可微和严格单调递增的。虽然我们成功地证明了 "理想/真实/完美/......忆阻器 "需要磁性,但这种结构仍然存在两个严重的局限性:1. 寄生 "电感 "效应;2. 双稳态性和连续电阻范围的动态扫描。然后,我们讨论了如何克服这两个限制,制造出具有多个或无限多个稳定状态且无寄生电感的全功能理想忆阻器。然后,我们对当前的忆阻器结构进行了一系列创新,如 "开放式 "结构、纳米级尺寸、具有立方各向异性(甚至各向同性)的磁性材料以及磁畴的顺序切换。与 "理想的忆阻器可能不存在或可能只是一个纯数学概念 "的猜想相反,我们对在自然界中发现或在实验室中制造出理想的忆阻器保持乐观。我们关于忆阻器通量-电荷相互作用的发现可能会推动忆阻器技术的发展和应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Can We Still Find an Ideal Memristor?
In 1971, Chua defined an ideal memristor that links magnetic flux φ and electric charge q. In a magnetic lump with a current-carrying conductor, we found that the direct interaction between physical magnetic flux φ and physical electric charge q is memristive by nature in terms of a time-invariant φ-q curve being nonlinear, continuously differentiable and strictly monotonically increasing. Although we succeeded in demonstrating that the “ideal/real/perfect/… memristor” needs magnetism, the structure still suffers from two serious limitations: 1. a parasitic “inductor” effect and 2. bistability and dynamic sweep of a continuous resistance range. Then, we discussed how to overcome these two limitations to make a fully functioning ideal memristor with multiple or an infinite number of stable states and no parasitic inductance. We then gave a number of innovations to the current memristor structure, such as an “open” structure, nanoscale size, magnetic materials with cubic anisotropy (or even isotropy) and sequential switching of the magnetic domains. Contrary to the conjecture that “an ideal memristor may not exist or may be a purely mathematical concept”, we remain optimistic that an ideal memristor will be discovered in nature or will be made in the laboratory. Our finding of the memristive flux–charge interaction may advance the development and application of the memristor technology.
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