H. A. El-Demsisy, Ahmed Shaker, M. D. Asham, Ibrahim S. Ahmed, Tarek M. Abdolkader
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引用次数: 0
摘要
由于具有潜在的高效率能量转换能力，光伏（PV）领域中的珍珠光泽石/硅串联太阳能电池备受关注。本研究提供的 TCAD 仿真旨在为 4-T Perovskite/PERL p 型硅串联太阳能电池提供一种新颖的设计。主要结构包括作为顶部电池的 ITO/CuSCN/Perovskite/PC60PM/AZO/AgNW 和作为底部电池的传统 PERL p 型硅。仿真结果表明，在用 Zn(O0.3,S0.7) 替代 AZO 和 PC60PM 电子传输层（ETL），同时用 CuI 替代 CuSCN 作为空穴传输层（HTL）的合适替代品之后，拟议的顶部电池结构实现了显著的性能。这些改进使顶部电池的效率达到了 19.81%。通过使用双面双侧纹理结构，底部电池的性能也达到了值得注意的水平，裸电池和过滤电池的效率分别达到了 29.11% 和 14.08%。通过这些综合改进，PCE（功率转换效率）达到了 33.89%，与基本结构相比有了显著提高。
Efficiency Boosting of 4-T Bifacial Dual-Textured Perovskite/Perl Silicon Tandem Solar Cells: Process and Device TCAD Simulation Study
Perovskite/Silicon tandem solar cells have earned substantial attention in the field of photovoltaics (PVs) due to their potential high-efficiency energy conversion. The provided TCAD simulation in the current work aims at delivering a novel design for a 4-T Perovskite/PERL p-type Si tandem solar cell. The main structure consists of ITO/CuSCN/Perovskite/PC60PM/AZO/AgNW as the top cell and a conventional PERL p-Si as the bottom cell. Simulation results showed that the proposed top cell structure achieves a significant performance after substituting Zn(O0.3,S0.7) for AZO and PC60PM electron transport layers (ETLs), while replacing CuSCN with CuI as a suitable alternative for the hole transport layer (HTL). These modifications achieved an efficiency of 19.81% for the top cell. The bottom cell also attained a noteworthy level of performance by using bifacial dual-side-textured construction with efficiencies reaching 29.11% and 14.08% for bare and filtered cells, respectively. With these combined modifications, the PCE (power conversion efficiency) reached 33.89%, showing significant improvement compared to the base structure.
期刊介绍：
The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
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