基于纳米结构 V2O5/MoO3 的脑启发光学记忆应用器件

IF 2.1 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Nanotechnology Pub Date : 2024-06-04 DOI:10.1109/TNANO.2024.3409151

Sharmila B;Priyanka Dwivedi

{"title":"基于纳米结构 V2O5/MoO3 的脑启发光学记忆应用器件","authors":"Sharmila B;Priyanka Dwivedi","doi":"10.1109/TNANO.2024.3409151","DOIUrl":null,"url":null,"abstract":"Brain inspired devices are the building block of the neuromorphic based artificial intelligence systems. This paper presents a novel optical memory devices based on the nanostructured V\n2\nO\n5\n/MoO\n3\n. These optical memory devices were fabricated using wafer scalable technology. The fabricated optical memory devices can mimic the synaptic behaviors such as paired pulse facilitation (PPF) index, excitatory postsynaptic current (EPSC), short term plasticity, inhibitory postsynaptic current (IPSC), spike dependent plasticity, long term plasticity and long term retention capability. The proposed device has shown a PPF index of 216% and long term retention time of 5.6 × 10\n3\n seconds. The demonstrated optical memory devices have highly sensitive, repeatable and have a potential to be used for neuromorphic computing applications.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"535-540"},"PeriodicalIF":2.1000,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Nanostructured V2O5/MoO3 Based Devices for Brain Inspired Optical Memory Applications\",\"authors\":\"Sharmila B;Priyanka Dwivedi\",\"doi\":\"10.1109/TNANO.2024.3409151\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Brain inspired devices are the building block of the neuromorphic based artificial intelligence systems. This paper presents a novel optical memory devices based on the nanostructured V\\n2\\nO\\n5\\n/MoO\\n3\\n. These optical memory devices were fabricated using wafer scalable technology. The fabricated optical memory devices can mimic the synaptic behaviors such as paired pulse facilitation (PPF) index, excitatory postsynaptic current (EPSC), short term plasticity, inhibitory postsynaptic current (IPSC), spike dependent plasticity, long term plasticity and long term retention capability. The proposed device has shown a PPF index of 216% and long term retention time of 5.6 × 10\\n3\\n seconds. The demonstrated optical memory devices have highly sensitive, repeatable and have a potential to be used for neuromorphic computing applications.\",\"PeriodicalId\":449,\"journal\":{\"name\":\"IEEE Transactions on Nanotechnology\",\"volume\":\"23 \",\"pages\":\"535-540\"},\"PeriodicalIF\":2.1000,\"publicationDate\":\"2024-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Nanotechnology\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10547461/\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Nanotechnology","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10547461/","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

受大脑启发的设备是基于神经形态的人工智能系统的基石。本文介绍了一种基于纳米结构 V2O5/MoO3 的新型光学存储器件。这些光存储器件是利用晶圆可扩展技术制造的。所制造的光学记忆器件可以模拟突触行为，如配对脉冲促进（PPF）指数、兴奋性突触后电流（EPSC）、短期可塑性、抑制性突触后电流（IPSC）、尖峰依赖可塑性、长期可塑性和长期保留能力。该器件的 PPF 指数为 216%，长期保持时间为 5.6 × 103 秒。所展示的光学存储器件灵敏度高、可重复性好，有望用于神经形态计算应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Nanostructured V2O5/MoO3 Based Devices for Brain Inspired Optical Memory Applications

Brain inspired devices are the building block of the neuromorphic based artificial intelligence systems. This paper presents a novel optical memory devices based on the nanostructured V ₂ O ₅ /MoO ₃ . These optical memory devices were fabricated using wafer scalable technology. The fabricated optical memory devices can mimic the synaptic behaviors such as paired pulse facilitation (PPF) index, excitatory postsynaptic current (EPSC), short term plasticity, inhibitory postsynaptic current (IPSC), spike dependent plasticity, long term plasticity and long term retention capability. The proposed device has shown a PPF index of 216% and long term retention time of 5.6 × 10 ³ seconds. The demonstrated optical memory devices have highly sensitive, repeatable and have a potential to be used for neuromorphic computing applications.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE Transactions on Nanotechnology 工程技术-材料科学：综合

CiteScore

4.80

自引率

8.30%

发文量

审稿时长

8.3 months

期刊介绍： The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.