R. Sai Prasad Goud , Mangababu Akkanaboina , Sravani Machiboyina , Kanaka Ravi Kumar , Arshiya Anjum , Saif A. Khan , A.P. Gnana Prakash , A.P. Pathak , S.V.S. Nageswara Rao
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引用次数: 0
摘要
在这项工作中，我们详细研究了高能离子和伽马射线辐照对非全度氧化钽（TaOx）金属氧化物半导体（MOS）电容器性能的影响。研究发现，在 120 MeV Ag 离子辐照临界通量（5E12 离子/平方厘米）之后，漏电流会增加。而累积电容在初始通量后急剧下降，即使在更高剂量下，滞后环也保持不变。在伽马射线辐照的情况下，泄漏电流和累积电容的顺序几乎保持不变，但随着剂量的变化会有细微的变化。光致发光研究表明，离子和伽马射线辐照样品中各类缺陷的密度都发生了特定变化。在这些器件中观察到的电性能变化与各种缺陷的性质和密度是一致的。研究表明，基于 TaOx 的 MOS 器件可以承受更高的剂量，并能在辐射恶劣的环境中工作。
A study on the gamma and swift heavy ion irradiation-induced effects on the electrical properties of TaOx-based MOS capacitors
In this work, we present a detailed study on the effects of energetic ions and gamma irradiation on the performance of non-stoichiometric tantalum oxide (TaOx) based Metal Oxide semiconductor (MOS) capacitors. The leakage current is found to increase after a critical fluence (5E12 ions/cm2) of 120 MeV Ag ion irradiation. Whereas the accumulation capacitance decreased drastically upon the initial fluence and the hysteresis loop is intact even at higher doses. The order of leakage current and accumulation capacitance remained almost the same in the case of gamma irradiation though there are minor variations as a function of dose. Photoluminescence studies indicated specific changes in the density of various types of defects in both ion and gamma irradiation samples. The observed changes in the electrical properties of these devices are consistent with the nature and density of various defects. The study suggests that the TaOx-based MOS devices can sustain higher doses and are capable of working in radiation-harsh environments.
期刊介绍：
Section B of Nuclear Instruments and Methods in Physics Research covers all aspects of the interaction of energetic beams with atoms, molecules and aggregate forms of matter. This includes ion beam analysis and ion beam modification of materials as well as basic data of importance for these studies. Topics of general interest include: atomic collisions in solids, particle channelling, all aspects of collision cascades, the modification of materials by energetic beams, ion implantation, irradiation - induced changes in materials, the physics and chemistry of beam interactions and the analysis of materials by all forms of energetic radiation. Modification by ion, laser and electron beams for the study of electronic materials, metals, ceramics, insulators, polymers and other important and new materials systems are included. Related studies, such as the application of ion beam analysis to biological, archaeological and geological samples as well as applications to solve problems in planetary science are also welcome. Energetic beams of interest include atomic and molecular ions, neutrons, positrons and muons, plasmas directed at surfaces, electron and photon beams, including laser treated surfaces and studies of solids by photon radiation from rotating anodes, synchrotrons, etc. In addition, the interaction between various forms of radiation and radiation-induced deposition processes are relevant.
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