Controllable antiresonance and low-bias negative differential conductance in T-shaped double dots with electron–phonon interaction

Controlling the quantum interference in nanoscaled systems has potential application for the realization of high-performance functional devices. In this work, the quantum interference of a T-shaped double-quantum-dot system is studied in detail by evaluation of differential conductance by means of nonequilibrium Green’s function method. The factors of Coulomb interaction in Luttinger liquid leads, electron–phonon interaction, interdot tunneling, and dot-lead coupling are taken into account. In the differential conductance curve, there appear a series of antiresonance dips due to phonon-assisted destructive interference when the interdot tunneling is weak, and they can coexist with zero-bias antiresonance dip. When the dot-lead couplings are asymmetric, both the antiresonance dip and Fano line shape dip can occur for strong dot-lead coupling. Our results also show the coexistence of low-bias negative differential conductance and Fano antiresonance, as a manifestation of the interplay between strong intralead Coulomb interaction and weak dot-lead coupling. These interference phenomena emerged in a relatively simple model promises helpful guidance for controlling over the electrical performance of interference-based molecular devices.