针对非理想去耦网络的稳健隐含共模共振 VCO

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE

IEEE Solid-State Circuits Letters Pub Date : 2024-03-10 DOI:10.1109/LSSC.2024.3399228

Dingxin Xu;Zheng Sun;Yuang Xiong;Yuncheng Zhang;Hongye Huang;Zezheng Liu;Ashbir Aviat Fadila;Atsushi Shirane;Kenichi Okada

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引用次数: 0

摘要

这封信介绍了一种压控振荡器（VCO），当去耦网络不理想时，它能实现稳健的闪烁噪声抑制。利用多抽头变压器，可以避免去耦网络寄生电阻造成的隐含共模（CM）阻抗品质因数（Q 因数）下降。拟议的 VCO 采用 65 纳米 CMOS 制作，在 4.24 至 4.80 GHz 的调谐范围内实现了 70 至 230 kHz 的闪烁角（1/f3 角）。在 1 MHz 偏移频率 fofst 时，拟议 VCO 的相位噪声 (PN) 为 -127.4 dBc/Hz，优越性图 (FoM) 为 193.1 dB。VCO 的核心面积为 0.29 平方毫米。

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A VCO With Robust Implicit Common-Mode Resonance Against Nonideal Decoupling Network

This letter describes a voltage-controlled oscillator (VCO) that can achieve robust flicker noise suppression when the decoupling network is not ideal. Utilizing a multitap transformer, the implicit common-mode (CM) impedance quality factor (Q factor) degradation from the parasitic resistance of the decoupling network can be avoided. Fabricated in 65-nm CMOS, the proposed VCO realizes a flicker corner (1/f3 corner) from 70 to 230 kHz across the tuning range from 4.24 to 4.80 GHz. The proposed VCO achieves a phase noise (PN) of -127.4 dBc/Hz at 1 MHz offset frequency fofst and a Figure of Merit (FoM) of 193.1 dB. The core area of the VCO is 0.29 mm2.

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来源期刊

IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering

CiteScore

4.30

自引率

3.70%

发文量