量子霍尔效应下 InGaAs/InAlAs 异质结构中无电流通过样品时的接触电势差

IF 1.1 4区材料科学 Q3 METALLURGY & METALLURGICAL ENGINEERING

Physics of Metals and Metallography Pub Date : 2024-05-08 DOI:10.1134/s0031918x23603165

S. V. Gudina, V. N. Neverov, K. V. Turutkin, I. S. Vasil’evskii, A. N. Vinichenko

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引用次数: 0

摘要

摘要本文介绍了在一个具有 InGaAs/InAlAs 量子阱的异质结构中，在量子霍尔效应的高原区，在没有外部电流通过样品的情况下，电位触点上出现电压的实验结果。电压的出现与磁场中二维电子气系统中电位接触区的边缘电流不等价有关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Contact Potential Difference in the Absence of a Current through a Sample in the Quantum Hall Effect Regime in InGaAs/InAlAs Heterostructure

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Contact Potential Difference in the Absence of a Current through a Sample in the Quantum Hall Effect Regime in InGaAs/InAlAs Heterostructure

Abstract

The paper presents experimental results of the appearance of a voltage at the potential contacts in the absence of an external current through a sample in the plateau region of the quantum Hall effect in a heterostructure with an InGaAs/InAlAs quantum well. The occurrence of a voltage is associated with the nonequivalence of the edge current in the potential contact areas in a magnetic field in a system with a two-dimensional electron gas.

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来源期刊

Physics of Metals and Metallography 工程技术-冶金工程

CiteScore

2.00

自引率

25.00%

发文量

108

审稿时长

3 months

期刊介绍： The Physics of Metals and Metallography (Fizika metallov i metallovedenie) was founded in 1955 by the USSR Academy of Sciences. Its scientific profile involves the theory of metals and metal alloys, their electrical and magnetic properties, as well as their structure, phase transformations, and principal mechanical properties. The journal also publishes scientific reviews and papers written by experts involved in fundamental, application, and technological studies. The annual volume of publications amounts to some 250 papers submitted from 100 leading national scientific institutions.