过渡金属五碲化物纳米片实现宽带非线性光学调制器向中红外区发展

IF 4.3 2区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-04-26 DOI:10.1109/JSTQE.2024.3394220

Yi Feng;Lin Du;Yuan He;Tiantian Zhou;Ruiting Zhou;Dongyang Liu;Ning Li;Lili Miao;Chujun Zhao

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引用次数: 0

摘要

宽带非线性光学调制器（NLOMs）是多功能光电应用所必需的，尤其是在中红外（mid-IR）波段。作为典型的狄拉克半金属，过渡金属五碲化镉（TMP）因其独特的宽带物理化学特性而备受关注，这使其成为光电器件的理想候选材料。在此，我们采用液相剥离（LPE）方法制备了 HfTe5 和 ZrTe5 纳米片，并通过实验证明了它们的超宽带非线性光学调制性能，波长范围从 2.8 到 10 μm。此外，还将基于 HfTe5 和 ZrTe5 纳米片的非线性光调制器引入了中红外 Er3+ 掺氟光纤激光器（EDFFL），以提供信噪比（SNR）分别为 43.4 和 38.3 dB、脉冲持续时间分别为 479 ns 和 571 ns 的 Q 开关脉冲。研究结果表明，TMP 纳米片具有宽带非线性光学响应，是稳定、宽带中红外非线性光学器件的理想候选材料。

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Broadband Nonlinear Optical Modulator Enabled by Transition Metal Pentatelluride Nanosheets Towards Mid-Infrared Regime

The broadband nonlinear optical modulators (NLOMs) are highly required for the versatile optoelectronic applications, especially towards the mid-infrared (mid-IR) regime. Transition metal pentatelluride (TMP), the typical Dirac semimetal, has attracted great attention due to its unique broadband physicochemical properties, which make it an ideal candidate for optoelectronic devices. Here, we prepared HfTe ₅ and ZrTe ₅ nanosheets by liquid-phase exfoliation (LPE) method and experimentally demonstrated their ultra-broadband nonlinear optical modulation performance covering wavelengths from 2.8∼10 μm. In addition, the NLOMs based on HfTe ₅ and ZrTe ₅ nanosheets have been introduced into the mid-IR Er ³⁺ -doped fluoride fiber lasers (EDFFL) to deliver the Q-switched pulses with signal-to-noise ratio (SNR) of 43.4 and 38.3 dB, and pulse duration of 479 ns and 571 ns, respectively. The results show that the TMP nanosheets exhibit broadband nonlinear optical response, which are ideal candidates for stable, broadband mid-IR NLOMs.

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来源期刊

IEEE Journal of Selected Topics in Quantum Electronics 工程技术-工程：电子与电气

CiteScore

10.60

自引率

2.00%

发文量

212

审稿时长

3 months

期刊介绍： Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature. Each issue is devoted to a specific topic within this broad spectrum. Announcements of the topical areas planned for future issues, along with deadlines for receipt of manuscripts, are published in this Journal and in the IEEE Journal of Quantum Electronics. Generally, the scope of manuscripts appropriate to this Journal is the same as that for the IEEE Journal of Quantum Electronics. Manuscripts are published that report original theoretical and/or experimental research results that advance the scientific and technological base of quantum electronics devices, systems, or applications. The Journal is dedicated toward publishing research results that advance the state of the art or add to the understanding of the generation, amplification, modulation, detection, waveguiding, or propagation characteristics of coherent electromagnetic radiation having sub-millimeter and shorter wavelengths. In order to be suitable for publication in this Journal, the content of manuscripts concerned with subject-related research must have a potential impact on advancing the technological base of quantum electronic devices, systems, and/or applications. Potential authors of subject-related research have the responsibility of pointing out this potential impact. System-oriented manuscripts must be concerned with systems that perform a function previously unavailable or that outperform previously established systems that did not use quantum electronic components or concepts. Tutorial and review papers are by invitation only.