Investigating the Dielectric Photosensitivity of Zinc Oxide Nanostructures Under Ultraviolet Light

In this study, we prepared a ZnO thin film using the sol-gel spin-coating method on glass substrates. We repeated the synthesis procedure once, twice and four times to obtain the samples. We then investigated the FESEM images, XRD diffractograms, Hall effect and dielectric measurement of the samples. We observed the phase transition from the wurtzite to the zinc blende phase as a result of the number of repetitions. The films exhibited direct band gaps ranging from 3.2 eV to 3.3 eV. This result indicate that the two-times synthesis process has considerably affected the morphology and also improved the crystallinity of the layer. The sample of which the surface was covered with nearly uniform short nanorod grains with an average diameter of ~ 180 nm showed the highest sensitivity to ultraviolet light.