{"title":"HFO2 薄膜中极性铁电相的形成取决于退火条件和杂质的化学性质","authors":"A. V. Bugaev, A. S. Konashuk, E. O. Filatova","doi":"10.1134/S1063774523601235","DOIUrl":null,"url":null,"abstract":"<p>The Rietveld quantitative phase analysis of the HfO<sub>2</sub> active layer in the Si-sub./SiO<sub>2</sub>/HfO<sub>2</sub>/TiN layered structures has been carried out at different annealing temperatures and dopant types. The HfO<sub>2</sub> crystal structure has been additionally examined by transmission electron microscopy. A relationship between the dopant valence and crystalline phases forming in the HfO<sub>2</sub> film has been found. It is shown that the Al doping followed by high-temperature annealing prevents the formation of the tetragonal phase (sp. gr. <i>P</i>42/<i>nmc</i>) in favor of the formation of the polar orthorhombic phase (sp. gr. <i>Pca</i>2<sub>1</sub>). The results obtained can be used in the synthesis of HfO<sub>2</sub>-based ferroelectric films for non-volatile memory systems.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":"69 1","pages":"16 - 22"},"PeriodicalIF":0.6000,"publicationDate":"2024-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Formation of a Polar Ferroelectric Phase in HFO2 Films Depending on Annealing Conditions and Chemical Properties of Impurities\",\"authors\":\"A. V. Bugaev, A. S. Konashuk, E. O. Filatova\",\"doi\":\"10.1134/S1063774523601235\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The Rietveld quantitative phase analysis of the HfO<sub>2</sub> active layer in the Si-sub./SiO<sub>2</sub>/HfO<sub>2</sub>/TiN layered structures has been carried out at different annealing temperatures and dopant types. The HfO<sub>2</sub> crystal structure has been additionally examined by transmission electron microscopy. A relationship between the dopant valence and crystalline phases forming in the HfO<sub>2</sub> film has been found. It is shown that the Al doping followed by high-temperature annealing prevents the formation of the tetragonal phase (sp. gr. <i>P</i>42/<i>nmc</i>) in favor of the formation of the polar orthorhombic phase (sp. gr. <i>Pca</i>2<sub>1</sub>). The results obtained can be used in the synthesis of HfO<sub>2</sub>-based ferroelectric films for non-volatile memory systems.</p>\",\"PeriodicalId\":527,\"journal\":{\"name\":\"Crystallography Reports\",\"volume\":\"69 1\",\"pages\":\"16 - 22\"},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2024-04-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Crystallography Reports\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1134/S1063774523601235\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"CRYSTALLOGRAPHY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Crystallography Reports","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1134/S1063774523601235","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
Formation of a Polar Ferroelectric Phase in HFO2 Films Depending on Annealing Conditions and Chemical Properties of Impurities
The Rietveld quantitative phase analysis of the HfO2 active layer in the Si-sub./SiO2/HfO2/TiN layered structures has been carried out at different annealing temperatures and dopant types. The HfO2 crystal structure has been additionally examined by transmission electron microscopy. A relationship between the dopant valence and crystalline phases forming in the HfO2 film has been found. It is shown that the Al doping followed by high-temperature annealing prevents the formation of the tetragonal phase (sp. gr. P42/nmc) in favor of the formation of the polar orthorhombic phase (sp. gr. Pca21). The results obtained can be used in the synthesis of HfO2-based ferroelectric films for non-volatile memory systems.
期刊介绍：
Crystallography Reports is a journal that publishes original articles short communications, and reviews on various aspects of crystallography: diffraction and scattering of X-rays, electrons, and neutrons, determination of crystal structure of inorganic and organic substances, including proteins and other biological substances; UV-VIS and IR spectroscopy; growth, imperfect structure and physical properties of crystals; thin films, liquid crystals, nanomaterials, partially disordered systems, and the methods of studies.
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